Abstract
Herein, the Ni/SiO2/p-Si MIS diode was developed via the liquid phase epitaxy (LPE) process. The structural and surface morphology were investigated by XRD and SEM techniques. The electrical study of the device, Ni/SiO2/n-Si, demonstrates a worthy rectification and the electrical parameters of the Schottky diode have computed using the I-V characterization. Different dielectric parameters as capacitance (C), permittivity (ε’), dielectric loss (ε”), conductance and ac conductivity (σac) were evaluated. Moreover, their relation to bias dc voltage has been examined in the frequency range 10 Hz–20 MHz, temperature 303 K to 363 K and DC bias voltage from -2 V to 2 V. Also, the variable investigated parameters were found to be dependent upon temperature, frequency and bias voltage.
Similar content being viewed by others
References
Lee D, Park J-W, Cho N-K et al (2019) Verification of charge transfer in metal-insulator-oxide semiconductor diodes via defect engineering of insulator. Sci Rep 9:1–9
Lee J, Yoon K, Lim K-H et al (2018) Vertical transport control of electrical charge carriers in insulator/oxide semiconductor hetero-structure. Sci Rep 8:1–9
Tanrıkulu EE, Yıldız DE, Günen A, Altındal Ş (2015) Frequency and voltage dependence of electric and dielectric properties of au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes. Phys Scr 90:95801
Har-Lavan R, Ron I, Thieblemont F, Cahen D (2009) Toward metal-organic insulator-semiconductor solar cells, based on molecular monolayer self-assembly on n-Si. Appl Phys Lett 94:27
Lin C-H, Liu CW (2010) Metal-insulator-semiconductor photodetectors. Sensors 10:8797–8826
An Y, Behnam A, Pop E, Ural A (2013) Metal-semiconductor-metal photodetectors based on graphene/p-type silicon Schottky junctions. Appl Phys Lett 102:13110
Tsai D-S, Lin C-A, Lien W-C, Chang HC, Wang YL, He JH (2011) Ultra-high-responsivity broadband detection of Si metal–semiconductor–metal schottky photodetectors improved by ZnO nanorod arrays. ACS Nano 5:7748–7753
Li H-M, Lee D-Y, Choi MS et al (2014) Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors. Sci Rep 4:1–7
Lin C-H, Yeh W-T, Chan C-H, Lin C-C (2012) Influence of graphene oxide on metal-insulator-semiconductor tunneling diodes. Nanoscale Res Lett 7:1–6
Afsal M, Wang C-Y, Chu L-W, Ouyang H, Chen LJ (2012) Highly sensitive metal–insulator–semiconductor UV photodetectors based on ZnO/SiO 2 core–shell nanowires. J Mater Chem 22:8420–8425
Malik A, Grimalsky V, Tsou MC, et al (2003) MIS capacitor radiation sensor with giant internal signal amplification on a base of UHR epi silicon [photodetector]. In: ESSDERC’03. 33rd conference on European solid-state device research, 2003. IEEE, pp 67–70
Gomila G (1999) Effects of interface states on the non-stationary transport properties of Schottky contacts and metal-insulator-semiconductor tunnel diodes. J Phys D Appl Phys 32:64–71
Bayindir M, Sorin F, Abouraddy AF, Viens J, Hart SD, Joannopoulos JD, Fink Y (2004) Metal–insulator–semiconductor optoelectronic fibres. Nature 431:826–829
Saλam M, Ayyildiz E, Gümüs A, Türüt A, Efeoλu H, Tüzemen S (1996) Series resistance calculation for the metal-insulator-semiconductor Schottky barrier diodes. Appl Phys A Mater Sci Process 62:269–273
Kim H, Hong S-H, Park YC et al (2014) Rapid thermal-treated transparent electrode for photodiode applications. Mater Lett 115:45–48
Ashery A, Elnasharty MMM, Khalil AAI, Azab AA (2020) Negative resistance, capacitance in Mn/SiO2/p-Si MOS structure. Mater Res Express 7:85901
Nasr M, El Radaf IM, Mansour AM (2018) Current transport and capacitance–voltage characteristics of an n-PbTe/p-GaP heterojunction prepared using the electron beam deposition technique. J Phys Chem Solids 115:283–288
El Radaf IM, Nasr M, Mansour AM (2018) Structural, electrical and photovoltaic properties of CoS/Si heterojunction prepared by spray pyrolysis. Mater Res Express 5:15904
El Radaf IM, Al-Kotb MS, Nasr M, Yahia IS (2019) Fabrication and electrical characterization of the InSbS3/n-Si heterojunction. J Alloys Compd 788:206–211
Sakr GB (2013) Characterization of Al/p-Si/n-AgGaSe2/au thin films heterojunction device. Mater Chem Phys 138:951–955
Mansour AM, Yahia IS, El Radaf IM (2018) Structural, electrical and photovoltaic properties of PbSb2S5/n-Si heterojunction synthesized by vacuum coating technique. Mater Res Express 5:76406
Salem SM, Osaman MBS, Salem AM et al (2014) Fabrication and characterization CuSbS2/n-Si solar cells. J Appl Sci Res 9:6668–6677
El Radaf IM, Elsaeedy HI, Yakout HA, El Sayed MT (2019) Junction parameters and electrical characterization of the Al/n-Si/cu 2 CoSnS 4/au Heterojunction. J Electron Mater 48:6480–6486
Ashery A, El Radaf IM, Elnasharty MMM (2019) Electrical and dielectric characterizations of Cu2ZnSnSe4/n-Si Heterojunction. Silicon 11:2567–2574
Nasr M, Mansour AM, El Radaf IM (2018) Current transport and capacitance-voltage characteristics of Sb2Se3/n-Si heterojunction diode prepared by electron beam evaporation. Mater Res Express 6:36405
Al-Zahrani HYS, El Radaf IM (2020) Fabrication, electrical and photovoltaic characterizations of SnSb2S4/n-Si Heterojunction. Silicon. https://doi.org/10.1007/s12633-020-00512-3
El Radaf IM, Mansour AM, Sakr GB (2018) Fabrication, electrical and photovoltaic characteristics of CuInGeSe4/n-Si diode. J Semicond 39:124010
El Radaf IM, El-Bana MS (2020) Synthesis and characterization of the CuSbSe2/n-Si heterojunction: electrical and photovoltaic characterizations. Phys B Condens Matter 584:412067
Byrum LE, Ariyawansa G, Jayasinghe RC, Dietz N, Perera AGU, Matsik SG, Ferguson IT, Bezinger A, Liu HC (2009) Negative capacitance in Ga N∕ Al Ga N heterojunction dual-band detectors. J Appl Phys 106:53701
Tataroğlu A, Dayan O, Özdemir N, Serbetci Z, al-Ghamdi AA, Dere A, el-Tantawy F, Yakuphanoglu F (2016) Single crystal ruthenium (II) complex dye based photodiode. Dyes Pigments 132:64–71
Hirose N, West AR (1996) Impedance spectroscopy of undoped BaTiO3 ceramics. J Am Ceram Soc 79:1633–1641
Al-Dharob MH, Kökce A, Aldemir DA, et al (2020) The origin of anomalous peak and negative capacitance on dielectric behavior in the accumulation region in au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal-polymer-semiconductor structures/diodes studied by temperature-dependent impedance measurements. J Phys Chem solids 144:109523
Cetinkaya HG, Yıldırım M, Durmus P, Altındal S (2017) Diode-to-diode variation in dielectric parameters of identically prepared metal-ferroelectric-semiconductor structures. J Alloys Compd 728:896–901
Sattar AA, Rahman SA (2003) Dielectric properties of rare earth substituted cu–Zn ferrites. Phys Status Solidi 200:415–422
Dutta P, Biswas S, De SK (2002) Dielectric relaxation in polyaniline–polyvinyl alcohol composites. Mater Res Bull 37:193–200
Karabulut A, Türüt A, Karataş Ş (2018) The electrical and dielectric properties of the au/Ti/HfO2/n-GaAs structures. J Mol Struct 1157:513–518
Perera AGU, Shen WZ, Ershov M, Liu HC, Buchanan M, Schaff WJ (1999) Erratum:“negative capacitance of GaAs homojunction far-infrared detectors”. Appl Phys Lett 75:304
Ehrenfreund E, Lungenschmied C, Dennler G, Neugebauer H, Sariciftci NS (2007) Negative capacitance in organic semiconductor devices: bipolar injection and charge recombination mechanism. Appl Phys Lett 91:12112
Badapanda T, Sarangi S, Parida S et al (2015) Frequency and temperature dependence dielectric study of strontium modified barium zirconium Titanate ceramics obtained by mechanochemical synthesis. J Mater Sci Mater Electron 26:3069–3082
Gozeh BA, Karabulut A, Yildiz A, Yakuphanoglu F (2018) Solar light responsive ZnO nanoparticles adjusted using cd and La co-dopant photodetector. J Alloys Compd 732:16–24
Al-Hartomy OA, Gupta RK, Al-Ghamdi AA, Yakuphanoglu F (2014) High performance organic-on-inorganic hybrid photodiodes based on organic semiconductor-graphene oxide blends. Synth Met 195:217–221
Ertuğrul R, Tataroğlu A (2014) Effects of gamma irradiation on electrical parameters of metal–insulator–semiconductor structure with silicon nitride interfacial insulator layer. Radiat Eff Defects Solids 169:791–799
Karataş Ş (2019) Frequency and voltage dependent electrical and dielectric properties of Ag/nGO doped PVA/p-Si sandwich structure at room temperature. J Sandw Struct Mater:1099636219840605
Durmuş H, Karataş Ş (2019) The analysis of the electrical characteristics and interface state densities of re/n-type Si Schottky barrier diodes at room temperature. Int J Electron 106:507–520
Gupta RK, Yakuphanoglu F (2012) Photoconductive Schottky diode based on Al/p-Si/SnS2/Ag for optical sensor applications. Sol Energy 86:1539–1545
Das AK, Hatada R, Ensinger W, Flege S, Baba K, Meikap AK (2018) Dielectric constant, AC conductivity and impedance spectroscopy of zinc-containing diamond-like carbon film UV photodetector. J Alloys Compd 758:194–205
Marıl E, Tan SO, Altındal Ş, Uslu İ (2018) Evaluation of electric and dielectric properties of metal–semiconductor structures with 2% GC-doped-(Ca3Co4Ga0.001Ox) interlayer. IEEE Trans Electron Devices 65:3901–3908
Demirezen S, Kaya A, Yerişkin SA, Balbaşı M, Uslu İ (2016) Frequency and voltage dependent profile of dielectric properties, electric modulus and ac electrical conductivity in the PrBaCoO nanofiber capacitors. Results Phys 6:180–185
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher’s Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Ashery, A., Elnasharty, M.M.M. & El Radaf, I.M. Current Transport and Dielectric Analysis of Ni/SiO2/P-Si Diode Prepared by Liquid Phase Epitaxy. Silicon 14, 153–163 (2022). https://doi.org/10.1007/s12633-020-00808-4
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s12633-020-00808-4