Abstract
Thin films of fluorine doped nanostructured SnO2 were deposited on quartz glass and single crystal p-n silicon solar cell wafer by chemical spray pyrolysis. XRD measurements reveal that the synthesized films were polycrystalline in nature and showed preferred orientation along (110) plane. The average grain size of films was increased after doping. The morphological properties of films investigated by AFM measurements showed that the root mean square of surface roughness of the film has increased after doping.The optical properties of SnO2 and SnO2:F films were studied by recording the transmittance as a function of wavelength. The optical energy gap of SnO2 and SnO2:F films were found to be 3.62 eV and 3.75 eV, respectively. The efficiency of solar cell has been increased from 4.86% to 5.46% and to 6.06% after depositing with single layer of antireflected SnO2 and SnO2:F films, respectively.
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The authors would like to thank the Ministry of higher education and scientific research and Mustansiriyah University (www.uomustansiriyah.edu.iq) Baghdad -Iraq for their support of the present work.
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Habubi, N.F., Ismail, R.A., Mishjil, K.A. et al. Increasing the Silicon Solar Cell Efficiency with Nanostructured SnO2 Anti-reflecting Coating Films. Silicon 11, 543–548 (2019). https://doi.org/10.1007/s12633-017-9727-6
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DOI: https://doi.org/10.1007/s12633-017-9727-6