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Photoconducting and Photovoltaic Properties of ZnO:TiO2 Composite/p-Silicon Heterojunction Photodiode

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Abstract

A photodiode based on titanium dioxide:zinc oxide (TiO2:ZnO) was fabricated to be used in optoelectronics applications. The TiO2:ZnO composite film was prepared by the sol-gel method. The structural properties of the composite film were analyzed by scanning electron microscopy and X-ray diffraction techniques. It is seen that the film is formed from the nanoparticles. The photoresponsivity properties of the TiO2:ZnO composite film/p-type silicon diode were analyzed by phototransient current and photocapacitance techniques. The diode exhibited an optoelectronic device with obtained photovoltaic and photocapacitance behaviors. It is evaluated that the TiO2:ZnO composite film/p-type silicon diode can be used as a optoelectronic device in optic communications and photoelectric applications.

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Acknowledgments

The project was funded by the Deanship of Scientific Research (DSR), King Abdulaziz University, under grant no. 247-176-D1437. The authors, therefore, acknowledge with thanks DSR technical and financial support.

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, Saudi Arabia

    Faten E. Al-Hazmi

  2. Department of Physics, Faculty of Science, Fiırat University, Elazıg, Turkey

    F. Yakuphanoglu

Authors
  1. Faten E. Al-Hazmi
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  2. F. Yakuphanoglu
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Correspondence to Faten E. Al-Hazmi.

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Al-Hazmi, F.E., Yakuphanoglu, F. Photoconducting and Photovoltaic Properties of ZnO:TiO2 Composite/p-Silicon Heterojunction Photodiode. Silicon 10, 781–787 (2018). https://doi.org/10.1007/s12633-016-9530-9

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  • DOI: https://doi.org/10.1007/s12633-016-9530-9

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