Abstract
Ni/n-type 6H-SiC/Ni Schottky barrier diodes (SBDs) have been prepared by the DC magnetron sputtering deposition technique. Their current-voltage characteristics (I-V) have been measured in the measurement temperature range of 40-400 K with steps of 20 K under dark conditions. The barrier height (BH) values from the temperature-dependent forward and reverse bias I-V characteristics by different methods coincide with each other which indicates the elimination of the polarity between the Si and C ions. The ideality factor value remains almost unchanged in the 160-400 K range, and below 160 K, it has the values of 1.57 at 140 K, and 3.82 at 60 K. The BH has the values of 0.79 eV at 400 K, and 0.71 eV at 300 K. The decrease in the BH is due to the fact that the current will preferentially flow through the lowest BH with decreasing temperature due to barrier inhomogeneity. The value of 0.71 eV at 300 K is in close agreement with the values of 0.65 and 0.83 eV reported from the forward bias I-V characteristics for the Ni /n-type 6H-SiC in the literature. Thus, it has been concluded that the reduced barrier devices are promising for applications in devices operating at cryogenic temperatures as infrared detectors, sensors in thermal imaging and small signal zero-bias rectifiers and microwave mixers.
Similar content being viewed by others
References
Im HJ, Ding Y, Pelz JP, Choyke WJ (2001) Phys Rev B 64:075310
Aboelfotoh MO, Frojdh C, Petersson CS (2003) Phys Rev B 67:075312
Waldrop JR, Grant RW (1993) Appl Phys Lett 62:2685–2687
Sefaoglu A, Duman S, Dogan S, Gurbulak B, Tuzemen S, Turut A (2008) Microelectron Eng 85:631–635
Roccaforte F, La Via F, Raineri V, Mangano F, Calcagno L (2003) Appl Phys Lett 83:4181–4183
Gammon PM, Péerez-Tomás A, Shah VA, Vavasour O, Donchev E, Pang JS, Myronov M, Fisher CA, Jennings MR, Leadley DR, Mawby PA (2013) J Appl Phys 114:223704
Çınar K, Coskun C, Gur E, Aydogan S (2009) Nuclear Instrum Methods Phys Research B 267:87–90
Raynaud C, Isoird K, Lazar M, Johnson CM, Wright N (2002) J Appl Phys 91:9842
Ma X, Sadagopan P, Sudarshan TS (2006) Phys Stat Sol (a) 203:643–650
Ewing DJ, Porter LM, Wahab Q, Ma X, Sudharshan TS, Tumakha S, Gao M, Brillson LJ (2007) J Appl Phys 101:114514
Teraji T, Hara S (2004) Phys Rev B 70(19):035312
Lee S-K, Zetterling C-M, Östling M (2001) J Electron Mater 30:242–246
Zhang Q, Sudarshan TS (2001) J Electron Mater 30:1466–1470
Bluet JM, Ziane D, Guillot G, Tournier D, Brosselard P, Montserrat J, Godignon P (2006) Superlatt Microstruct 40:399– 404
Duman S, Dogan S, Gurbulak B, Turut A (2008) Appl Phys A 91:337–340
Omotoso E, Meyer WE, Auret FD, Paradzah AT, Diale M, Coelho SMM, Janse van Rensburg PJ (2015) Mater Sci Semiconduc Process 39:112–118
Tung RT (2000) Phys Rev Lett 84:6078
Hoekstra J, Kohyama M (1998) Phys Rev B 57:2334
Waldrop JR (1994) J Appl Phys 75:4548–4550
Hamida AF, Ouennoughi Z, Sellai A, Weiss R, Ryssel H (2008) Semicond Sci Technol 23(6):045005
Shigiltchoff O, Bai S, Devaty RP, Choyke WJ, Kimoto T, Hobgood D, Neudeck PG, Porter LM (2003) Mater Sci Forum 433–436:705–708
Itoh A, Matsunami H (1997) Phys Status Solidi a 162:389–408
Nikitina I, Vassilevski K, Horsfall A, Wright N, O’Neill AG, Ray SK, Zekente K, Johnson CM (2009) Semicond Sci Technol 24:055006
Eglash SJ, Newman N, Pan S, Mo D, Shenai K, Spicer WE, Ponce FA, Collins DM (1987) J Appl Phys 61:5159–5169
Turut A, Karabulut A, Ejderha K, Bıyıklı N (2015) Mater Sci Semiconduc Process 39:400–407
Gammon PM, Pérez-Tomás A, Shah VA, Roberts GJ, Jennings MR, Covington JA, Mawby PA (2009) J Appl Phys 106:093708
Tugluoglu N, Çalışkan F, Yüksel ÖF (2015) Synthetic Metals 199:270–275
Chand S, Kaushala P, Osvald J (2013) Mater Sci Semicond Process 16:454–460
Yildirim N, Korkut H, Turut A (2009) Eur Phys J Appl Phys 45:10302
Yakuphanoglu F, Basaran E, Senkal BF, Sezer E (2006) J Phys Chem B 110:16908–16913
Akkaya A, Esmer L, Karaaslan T, Çetin H, Ayyıldız E (2014) Mater Sci Semicond Process 28:127–134
Biber M, Coskun C, Turut A (2005) Eur Phys J Appl Phys 31:79–86
Jyothi I, Janardhanam V, Hong H, Choi C-J (2015) Mater Sci Semicond Process 39:390–399
Duman S (2008) Semicond Sci Technol 23:075042
Biyikli N, Karabulut A, Efegolu H, Guzeldir B, Turut A (2014) Phys Scr 89:095804
Rhoderick EH, Williams RH (1998) Metal-semiconductor contacts, 2nd edn. Clarendon, Oxford
Ejderha K, Zengin A, Orak I, Tasyurek B, Kilinc T, Turut A (2011) Mater Sci Semiconduc Process 14:5–12
Osvald J, Kuzmik J, Konstantinidis G, Lobotka P, Georgakilas A (2005) Microelectron Eng 81:181–187
Mohammad SN (2005) J Appl Phys 97:063703
Tung RT (2001) Mater Sci Eng R:351–138
Ru GP, Van Meirhaeghe RL, Forment S, Jiang YL, Qu XP, Zhu S, Li BZ (2005) Solid State Electron 49:606–611
Song YP, Van Meirhaeghe RL, Laflére WH, Cardon F (1986) Solid-St Electron 29:633–638
Werner JH, Gűttler HH (1991) J Appl Phys 69:1522–1533
Dobrocka E, Osvald J (1994) Appl Phys Lett 65:575–577
Chand S, Kumar J (1996) Semicond Sci Technol 11:1203–1208
Zhu S, Van Meirhaeghe RL, Detavernier C, Cardon F, Ru GP, Qu XP, Li BZ (2000) Solid-State Elecron 44:663–671
Chawanda A, Roro KT, Auret FD, Mtangi W, Nyamhere C, Nel J, Leach L (2010) Mater Sci Semicond Process 13:371–375
Huang W-C, Lin T-C, Horng C-T, Li Y-H (2013) Mater Sci Semicond Process 16:418–423
Yılmaz S, Bacaksız E, Polat I, Atasoy Y (2012) Current Appl Phys 12:1326–1333
Hamdaoui N, Ajjel R, Salem B, Gendry M (2014) Mater Sci Semicond Process 26:431–437
Karatas S, Altındal S, Turut A, Cakar M (2007) Physica B 392:43–50
Begum A, Rahman A (2014) Mater Sci Semicond Process 25:231–237
Ejderha K, Yıldırım N, Turut A (2014) Eur Phys J Appl Phys 68:20101
Vanalme GM, Goubert L, Van Meirhaeghe RL, Cardon F, van Daele P (1999) Semicond Sci Technol 14:871
Ouennoughi Z, Toumi S, Weiss R (2015) Physica B 456:176–181
Gülnahar M (2014) Superlattice Microst 76:394–412
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Ejderha, K., Karabulut, A., Turkan, N. et al. The Characteristic Parameters of Ni/n-6H-SiC Devices Over a Wide Measurement Temperature Range. Silicon 9, 395–401 (2017). https://doi.org/10.1007/s12633-016-9426-8
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s12633-016-9426-8