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Wetting and interfacial reaction characteristics of Sn-1.2Ag-0.5Cu-xIn quaternary solder alloys

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Abstract

Through the use of a wetting balance technique, the wetting characteristics of Sn-1.2Ag-0.5Cu-xIn quaternary solder alloys with respect to the In content and soldering temperature were investigated to validate the applicability of compositions with a low Ag content as solder material. It was found that a small addition (0.4–0.6 wt.%) of In significantly improved the wetting properties of the Sn-1.2Ag-0.5Cu-xIn composition at soldering temperatures ranging from 230 °C to 240 °C due to the excellent wetting property of In. In an observation of the interfacial reaction, it was found that the added In element did not participate in the interfacial reaction with a Cu or Ni pad, unlike in the Sn-Ag-Cu-In case, which has a high In content. The package or boardside IMC layers in Sn-1.2Ag-0.5Cu-0.4In joints were thinner than those of Sn-3.0Ag-0.5Cu, especially after aging.

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References

  1. K.-W. Moon, W. J. Boettinger, U. R. Kattner, F. S. Biancaniello, and C. A. Handwerker, J. Electron. Mater. 29, 1122 (2000).

    Article  CAS  Google Scholar 

  2. I. Ohnuma, M. Miyashita, K. Anzai, and X. J. Liu, J. Electron. Mater. 29, 1137 (2000).

    Article  CAS  Google Scholar 

  3. K. S. Kim, S. H. Huh, and K. Suganuma, Mater. Sci. Eng. A 333, 106 (2002).

    Article  Google Scholar 

  4. M. O. Alam, Y. C. Chan, and K. N. Tu, Chem. Mater. 15, 4340 (2003).

    Article  CAS  Google Scholar 

  5. J. Yu, K. O. Lee, and D. K. Joo, J. Microelect. Packag. Soc. 10, 29 (2003).

    Google Scholar 

  6. K. S. Kim, S. H. Huh, and K. Suganuma, J. Alloy Compd. 352, 226 (2003).

    Article  CAS  Google Scholar 

  7. N. Duan, J. Scheer, J. Bielen, and M. V. Kleef, Microelectron. Reliab. 43, 1317 (2003).

    Article  CAS  Google Scholar 

  8. S. K. Kang, P. Lauro, D.-Y. Shih, D. W. Henderson, T. Gosselin, J. Bartelo, S. R. Cain, C. Goldsmith, K. J. Puttlitz, and T.-K. Hwang, Proc. 54 th ECTC, p. 661, IEEE, Las Vegas, USA (2004).

    Google Scholar 

  9. A. Lalonde, D. Emelander, J. J. Jeannette, C. Larson, W. Rietz, D. Swenson, and D. W. Henderson, J. Electron. Mater. 33, 1545 (2004).

    Article  CAS  Google Scholar 

  10. J. H. L. Pang, T. H. Low, B. S. Xiong, X. Luhua, and C. C. Neo, Thin Solid Films 462, 370 (2004).

    Article  Google Scholar 

  11. A. Sharif, M. N. Islam, and Y. C. Chan, Mater. Sci. Eng. B 113, 184 (2004).

    Google Scholar 

  12. Q.-L. Zeng, Z.-G. Wang, A.-P. Xian, and J. K. Shang, J. Electron. Mater. 34, 62 (2005).

    Article  CAS  Google Scholar 

  13. M. L. Huang, C. M. L. Wu, and L. Wang, J. Electron. Mater. 34, 1373 (2005).

    Article  CAS  Google Scholar 

  14. W. C. Luo, C. E. Ho, J. Y. Tsai, Y. L. Lin, and C. R. Kao, Mater. Sci. Eng. A 396, 385 (2005).

    Article  Google Scholar 

  15. D. Li, C. Liu, and P. P. Conway, Mater. Sci. Eng. A 391, 95 (2005).

    Article  Google Scholar 

  16. W. S. Hong and C. M. Oh, J. Kor. Inst Met. & Mater. 47, 842 (2009).

    CAS  Google Scholar 

  17. J. Gong, C. Liu, P. P. Conway, and V. V. Silberschmidt, Scripta Mater. 60, 333 (2009).

    Article  CAS  Google Scholar 

  18. G. Henshall, R. Healy, R. S. Pandher, K. Sweatman, K. Howell, R. Coyle, T. Sack, P. Snugovsky, S. Tisdale, and F. Hua, SMTA J. 21, 11 (2008).

    Google Scholar 

  19. M Amagai, Y Toyoda, and T Tajima, Proc. 53 rd ECTC, p. 317, IEEE, New Orleans, USA (2003).

  20. S. Terashima, Y. Kariya, and M. Tanaka, Mater. Trans. 45, 673 (2004).

    Article  CAS  Google Scholar 

  21. W. Liu and N.-C. Lee, JOM July, 26 (2007).

    Article  Google Scholar 

  22. R. S. Pandher, B. G. Lewis, R. Vangaveti, and B. Singh, Proc. 57 th ECTC, p. 669, IEEE, Reno, USA (2007).

    Google Scholar 

  23. J.-H. Lee, A.-M. Yu, J.-H. Kim, M.-S. Kim, and N. Kang, Met. Mater. Int. 14, 649 (2008).

    Article  CAS  Google Scholar 

  24. D. Q. Yu, J. Zhao, and L. Wang, J. Alloy Compd. 376, 170 (2004).

    Article  CAS  Google Scholar 

  25. C. M. L. Wu, D. Q. Yu, C. M. T. Law, and L. Wang. Mater. Sci. Eng. R 44, 1 (2004).

    Article  Google Scholar 

  26. A.-M. Yu, C.-W. Lee, M.-S Kim, and J.-H. Lee, Met. Mater. Int. 13, 517 (2007).

    Article  CAS  Google Scholar 

  27. Z. Moser, P. Sebo, W. Gąsior, P. Scec, and J. Pstru, Calphad 33, 63 (2009).

    Article  CAS  Google Scholar 

  28. P. L. Yu, Y. C. Chan, K. C. Hung, and J. K. L. Lai, Microelectron. Reliab. 41, 287 (2001).

    Article  Google Scholar 

  29. M. J. Rizvi, Y. C. Chan, C. Bailey, H. Lu, M. N. Islam, and B. Y. Wu, J. Electron. Mater. 34, 1115 (2005).

    Article  CAS  Google Scholar 

  30. H. Wang, F. Gao, X. Ma, and Y. Qian, Scripta mater. 55, 823 (2006).

    Article  CAS  Google Scholar 

  31. J. Guo, L. Zhang, A. Xian, and J. K. Shang, J. Mater. Sci. Technol. 23, 811 (2007).

    CAS  Google Scholar 

  32. J. S. Hwang, SMT Magazine Oct. (2000).

  33. J. S. Hwang, Modern Solder Technology for Competitive Electronics Manufacturing, p. 74–77, McGraw-Hill, New York (1996).

    Google Scholar 

  34. S. W. Yoon, W. K. Choi, and H. M. Lee, Scripta mater. 40, 297 (1999).

    Article  CAS  Google Scholar 

  35. M. N. Islam, Y. C. Chan, A. Sharif, and M. J. Rizvi, J. Alloy Compd. 396, 217 (2005).

    Article  CAS  Google Scholar 

  36. J.-M. Song, Z.-M Wu, and D.-A. Huang, Scripta mater. 56, 413 (2007).

    Article  CAS  Google Scholar 

  37. M. Amagai, Y. Toyata, T. Tajima, and S. Akita, Proc. 54 th ECTC, p. 1304, IEEE, Las Vegas, USA (2004).

    Google Scholar 

  38. J. W. Jang, J. K. Lin, and D. R. Frear, J. Electron. Mater. 36, 207 (2007).

    Article  CAS  Google Scholar 

  39. C. E. Ho, R. Y. Tsai, Y. L. Lin, and C. R. Kao, J. Electron. Mater. 31, 584 (2002).

    Article  CAS  Google Scholar 

  40. Y. C. Chan, P. L. Tu, C. W. Tang, K. C. Hung, and J. K. L. Lai, IEEE Trans. Adv. Packag. 24, 25 (2001).

    Article  CAS  Google Scholar 

  41. D. Suh, D. W. Kim, P. Liu, H. Kim, J. A. Weninger, C. M. Kumar, A. Prasad, B. W. Grimsley, and H. B. Tejada, Mat. Sci. Eng. A 460, 595 (2007).

    Article  Google Scholar 

  42. A.-M. Yu, J.-K. Kim, J.-H. Lee, and M.-S. Kim, Mater. Res. Bull. 45, 359 (2010).

    Article  CAS  Google Scholar 

  43. A.-M. Yu, J.-K. Kim, J.-H. Kim. M.-S. Kim, and J.-H. Lee, Proc. IUMRS-ICA, MRS-J, Nagoya, Japan (2008).

    Google Scholar 

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Yu, AM., Kim, MS., Lee, CW. et al. Wetting and interfacial reaction characteristics of Sn-1.2Ag-0.5Cu-xIn quaternary solder alloys. Met. Mater. Int. 17, 521–526 (2011). https://doi.org/10.1007/s12540-011-0634-x

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  • DOI: https://doi.org/10.1007/s12540-011-0634-x

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