Abstract
We derive the trial Hall resistance formula for the quantum Hall metals to address both the integer and fractional quantum Hall effects. Within the degenerate (and crossed) Landau levels, and in the presence of changing magnetic field strength, one can invoke two physical processes responsible for the electron conduction and quantum Hall effects in Fermi metals. One of the process requires the Pancharatnam wavefunction transformation, while the second involves electron transfer between two orthogonalized wavefunctions (within the degenerate and crossed Landau levels). We discuss the relevant physical postulates with respect to these physical processes to qualitatively reproduce the measured Hall resistance’s zigzag curve for both the integer and the fractional filling factors. Along the way, we give out some evidence to contradict the postulates with experiments.
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Acknowledgements
The author is grateful to the financiers of Condensed Matter Group (between August 2011 and August 2013), Madam Sebastiammal Savarimuthu, Mr Arulsamy Innasimuthu, Madam Amelia Das Anthony, Mr Malcolm Anandraj and Mr Kingston Kisshenraj. The author would like to thank Mr Alexander Jeffrey Hinde (The University of Sydney) and Dr Marco Fronzi (Osaka City University) for their help in providing some of the references and also the referees for pointing out the confusing parts that needed explanation.
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ARULSAMY, A.D. Magnetoresistance in quantum Hall metals due to Pancharatnam wavefunction transformation and degenerate Landau levels. Pramana - J Phys 85, 161–172 (2015). https://doi.org/10.1007/s12043-014-0889-0
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DOI: https://doi.org/10.1007/s12043-014-0889-0
Keywords
- Quantum Hall metals
- fractional and integer quantum Hall effects
- Pancharatnam wavefunction transformation
- degenerate Landau levels