Abstract
Pr and Gd co-modified Bi 0⋅95−xPr x Gd 0⋅05FeO 3 (x = 0⋅00, 0⋅05, 0 ⋅10) (BPGFO) thin films on Pt(111) / Ti /SiO 2 /Si(100) substrates were prepared by a sol-gel together with spin coating technique. A detailed study of electrical and magnetic properties of these thin films is reported. X-ray diffraction analysis shows that, with an increase in Pr content, the crystal structures of BPGFO thin films retain rhombohedral (R3c) symmetry accompanied by structure distortion. Polarization-electric field hysteresis loops of these thin films demonstrate that the incorporation of Pr and Gd into the Bi site of BiFeO 3 thin film could enhance the ferroelectric performance. Compared to other thin films, the optimal ferroelectric behaviours in Bi 0⋅85Pr 0⋅1Gd 0⋅05FeO 3 thin film are ascribed to its large dielectric constant, low dissipation factor and low leakage current density. Room temperature magnetization-magnetic field curves of these thin films indicate that all the samples are of paramagnetic behaviours and the enhanced saturation magnetic properties can be found.
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Acknowledgements
This study is partially financed by the Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD), China, and also partially supported by University Students’ innovative undertaking training program of higher education of Jiangsu Province (granted number: 201410291004Z).
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CHEN, C.C., LIU, Z.X., WANG, G. et al. Pr and Gd co-doped bismuth ferrite thin films with enhanced multiferroic properties. Bull Mater Sci 37, 1725–1729 (2014). https://doi.org/10.1007/s12034-014-0719-5
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DOI: https://doi.org/10.1007/s12034-014-0719-5