Abstract
Bulk single crystal of 4-aminobenzophenone with a size of 25 mm dia. and 35 mm length has been grown by vertical Bridgman technique. The crystal system of the grown crystal was confirmed by X-ray diffraction analysis. Crystalline perfection was analysed by high resolution X-ray diffraction studies. Chemical etching was carried out for the first time in 4-aminobenzophenone single crystal to study the defects presented in the grown crystal and the growth mechanism involved. Several organic etchants were employed with different etching time to select suitable etchant for studying dislocation pattern and other structural defects existing in the grown crystal. Etch patterns such as spirals and striations observed for the selective etchants provide considerable information on growth mechanism of the crystal.
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Acknowledgements
This research work is financially supported by the Department of Science and Technology, New Delhi (Sanction No: SR/FTP/PS-41/2007). The authors are thankful to DST FIST, Government of India, for providing experimental facility. Authors are thankful to Dr N Kumaran, Department of Metallurgical and Materials Engineering, National Institute of Technology, Tiruchirappalli, for providing facilities to carry out etching studies.
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PRABHAKARAN, S., RAMESH BABU, R., BHAGAVANNARAYANA, G. et al. Studies on bulk growth, structural and microstructural characterization of 4-aminobenzophenone single crystal grown from vertical Bridgman technique. Bull Mater Sci 37, 151–156 (2014). https://doi.org/10.1007/s12034-014-0633-x
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DOI: https://doi.org/10.1007/s12034-014-0633-x