Abstract
CuInSe2 thin films were prepared by one-step electrodeposition process using a simplified two-electrodes system. The films were deposited, during 5, 10, 15 and 20 min, from the deionized water solution consisting of CuCl2, InCl3 and SeO2 onto ITO-coated glass substrates. As-deposited films have been annealed under vacuum at 300 °C during 30 min. The structural, optical band gap and electrical resistivity of elaborated films were studied, respectively, using X-ray diffraction (XRD), Raman spectroscopy, UV spectrophotometer and four-point probe method. The micro structural parameters like lattice constants, crystallite size, dislocation density and strain have been evaluated. The XRD investigation proved that the film deposited at 20 min present CuInSe2 single phase in its chalcopyrite structure and with preferred orientation along (1 1 2) direction, whereas the films deposited at 5, 10 and 15 min show the CuInSe2 chalcopyrite structure with the In2Se3 as secondary phase. We have found that the formation mechanism of CuInSe2 depends on the In2Se3 phase. The optical band gap of the films is found to decrease from 1.17 to 1.04 eV with increase in deposition time. All films show Raman spectra with a dominant A1 mode at 174 cm−1, confirming the chalcopyrite crystalline quality of these films. The films exhibited a range of resistivity varying from 2.3 × 10−3 to 4.4 × 10−1 Ω cm.
Similar content being viewed by others
References
Chaure N B, Young J, Samantilleke A P and Dharmadasa I M 2004 Sol. Energy Mat. Sol. Cells 81 125
Chen H, Yu S M, Shin D W and Yoo J B 2010 Nanoscale Res. Lett. 5 217
Deepa K G, Jayakrishnan R, Vijayakumar K P, Sudha Kartha C and Ganesan V 2009 Solar Energy 83 964
Deepa K G, Vijayakumar K P and Sudhakartha C 2012 Mater. Sci. Semiconduct. Proc. 15 120
Dhanam M, Manoj P K and Prabhu R R 2005 J. Cryst. Growth 280 425
Fahoume M, Chraibi F, Aggour M and Ennaoui A 1998 Ann. Chim. Sci. Mater. 23 373
Faraday M 1834 Philos. Trans. R. Soc. 124 77
Guillemoles J F, Cowache P, Lusson A, Fezzaa K, Boisivon F, Vedel J and Lincot D 1996 J. Appl. Phys. 79 7293
Guillén C, Martinez M A and Herrero J 2000 Vacuum 58 594
Huang C J, Meen T H, Lai M Y and Chen W R 2004 Sol. Energy Mater. Sol. Cells 82 553
International Center for Diffraction Data, ICDD, PDF2 Database, file number 40-1487 for CuInSe2.
International Center for Diffraction Data, ICDD, PDF2 Database, file number 72-1469 for In2Se3.
Julien C and Eddrief M 1992 Mater. Sci. Eng. B13 247
Kavcar N, Carter M J and Hill R 1992 Sol. Energy Mat. Sol. Cells 27 13
Malssel L I and Glang R 1970 Handbook of thin film technology (New York: McGraw Hill Book Company)
Mellikov E et al 2008 Thin Solid Films 516 7125
Moharram A H, Hafiz M M and Salem A 2001 Appl. Surf. Sci. 172 61
Moorthy Babu S, Ennaoui A and Ch Lux-Steiner M 2005 J. Cryst. Growth 275 1241
Muller J, Nowoczin J and Schmitt H 2006 Thin Solid Films 496 364
Murali K R 1988 Thin Solid Films 167 19
Niki S, Suzuki R, Ishibashi S, Ohdaira T, Fons P J, Yamada A, Oyanagi H, Wada T, Kimura R and Nakada T 2001 Thin Solid Films 387 129
Pachori R D, Banerjee A and Chopra K L 1986 Bull. Mater. Sci. 8 291
Pal R, Chattopadhyay K K, Chaudhuri S and Pal A K 1994 Thin Solid Films 247 8
Parretta A, Addonizio M L, Agati A, Pellegrino M, Quercia L, Cardellini F, Kessler J and Schock H W 1993 Jpn. J. Appl. Phys. 32 80
Rincon C, Gonzalez J and Sanchez Perez G 1983 Solid State Commun. 48 1001
Shah N M, Ray J R, Patel K J, Kheraj V A, Desai M S, Panchal C J and Rehani B 2009 Thin Solid Films 517 3639
Sharma K C, Sharma R P and Garg C 1992 J. Phys. D: Appl. Phys. 24 1019
Tembhurkar Y D and Hirde J P 1994 Bull. Mater. Sci. 17 465
Urbach F 1953 Phys. Rev. 92 1324
Volobujeva O, Altosaar M, Raudoja J, Mellikov E, Grossberg M, Kaupmees L and Barvinschi P 2009 Sol. Energy Mat. Sol. Cells 93 11
Weast R C (ed.) 1980 CRC handbook of chemistry and physics (Boca Raton, FL: CRC)
Wellings J S, Samantilleke A P, Heavens S N, Warren P and Dharmadasa I M 2009 Sol. Energy Mat. Sol. Cells 93 1518
White F R, Clark A H and Graf M C 1979 J. Appl. Phys. 50 544
Zaretskaya E P, Gremenok V F, Riede V, Schmitz W, Bente K, Zalesski V B and Ermakov O V 2003 J. Phys. Chem. Solids 64 1989
Zouaoui A, Lachab M, Hidalgo M L, Chaffa A, Llinares C and Kesri N 1999 Thin Solid Films 339 10
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Meglali, O., Attaf, N., Bouraiou, A. et al. One-step electrodeposition process of CuInSe2: Deposition time effect. Bull Mater Sci 37, 1535–1542 (2014). https://doi.org/10.1007/s12034-014-0108-0
Received:
Revised:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s12034-014-0108-0