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Optimization of process parameter for synthesis of silicon quantum dots using low pressure chemical vapour deposition

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Abstract

Si quantum dots-based structures are studied recently for performance enhancement in electronic devices. This paper presents an attempt to get high density quantum dots (QDs) by low pressure chemical vapour deposition (LPCVD) on SiO 2 substrate. Surface treatment, annealing and rapid thermal processing (RTP) are performed to study their effect on size and density of QDs. The samples are also studied using Fourier transformation infrared spectroscopy (FTIR), atomic force microscopy (AFM), scanning electron microscopy (SEM) and photoluminescence study (PL). The influence of Si–OH bonds formed due to surface treatment on the density of QDs is discussed. Present study also discusses the influence of surface treatment and annealing on QD formation.

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Acknowledgements

Authors are thankful to Ministry of Communication and Information Technology, Government of India, for funding and INUP, Indian Institute of Technology, Bombay, for supporting this research work.

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Authors and Affiliations

  1. Department of Metallurgical and Material Engineering, Visvesvaraya National Institute of Technology, Nagpur, 440 010, India

    DIPIKA BARBADIKAR & JATIN BHATT

  2. Department of Electronics Engineering, Visvesvaraya National Institute of Technology, Nagpur, 440 010, India

    RASHMI GAUTAM, SANJAY SAHARE & RAJENDRA PATRIKAR

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  1. DIPIKA BARBADIKAR
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  2. RASHMI GAUTAM
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  3. SANJAY SAHARE
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  4. RAJENDRA PATRIKAR
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  5. JATIN BHATT
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Correspondence to JATIN BHATT.

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BARBADIKAR, D., GAUTAM, R., SAHARE, S. et al. Optimization of process parameter for synthesis of silicon quantum dots using low pressure chemical vapour deposition. Bull Mater Sci 36, 483–490 (2013). https://doi.org/10.1007/s12034-013-0487-7

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  • DOI: https://doi.org/10.1007/s12034-013-0487-7

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