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Optoelectronic and Photonic Characteristics of Al/p-Si Diode with Boric Acid-Doped Zinc Oxide Interlayer

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Abstract

Al/ZnO/p-Si diodes have been fabricated using different doping concentrations of a boric acid (H3BO3)-doped zinc oxide (ZnO) interlayer. The boric acid-doped ZnO films were obtained by the sol–gel method and coated by the spin-coating technique. The optoelectronic and electronic properties of the prepared diodes were studied under different illumination and frequency conditions. Current measurements of the diodes under both dark and illumination indicate that they exhibit a photovoltaic behavior. The diode with 5 wt.% H3BO3-doped ZnO interlayer showed the best diode properties with a rectification ratio of 4.23 × 104 at ± 5 V. Also, the photocurrent, photoconductance, and photocapacitance transients of the diodes prove that they exhibit both photodiode and photocapacitor behavior. In addition, the capacitance and conductance measurements of the diodes were carried out over a wide frequency range. The results denote that the generated diodes can be utilized as photo-diode/capacitors in optoelectronic technologies.

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Acknowledgements

Authors would like to acknowledge the support of the King Khalid University for this research through grant # RCAMS/KKU/p002-21 under the Research Center for Advanced Materials Science at King Khalid University, Kingdom of Saudi Arabia. Also, authors would like to acknowledge the support of FIRAT University Scientific Research Projects Unit for this research through ADEP-22.01, FF.12.19, and FF.22.17, ADEP-23.05 grants.

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Authors and Affiliations

  1. Department of Chemistry, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, 61413, Saudi Arabia

    Abdullah G. Al-Sehemi

  2. Research Center for Advanced Materials Science, King Khalid University, P.O. Box 9004, Abha, 61413, Saudi Arabia

    Abdullah G. Al-Sehemi

  3. Unit of Science and Technology, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, 61413, Saudi Arabia

    Abdullah G. Al-Sehemi

  4. Department of Physics, Faculty of Science, Gazi University, 06560, Ankara, Turkey

    A. Tataroglu

  5. Department of Basic Sciences, Faculty of Science, Erzurum Technical University, 25100, Erzurum, Turkey

    Abdulkerim Karabulut

  6. Vocational School of Technical Science, Department of Electric and Energy, Firat University, 23119, Elazig, Turkey

    Aysegul Dere

  7. Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589, Saudi Arabia

    Ahmed A. Al-Ghamdi & F. Yakuphanoglu

  8. Department of Physics, Faculty of Science, Fırat University, 23119, Elazıg, Turkey

    F. Yakuphanoglu

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  1. Abdullah G. Al-Sehemi
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Correspondence to Abdulkerim Karabulut.

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Al-Sehemi, A.G., Tataroglu, A., Karabulut, A. et al. Optoelectronic and Photonic Characteristics of Al/p-Si Diode with Boric Acid-Doped Zinc Oxide Interlayer. JOM 75, 3587–3600 (2023). https://doi.org/10.1007/s11837-023-05979-0

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