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Evidence of Silicon Band-Edge Emission Enhancement When Interfaced with SiO2:Er Films

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Abstract

Nearly two-orders of magnitude increase in room-temperature band-to-band (1.067 eV) infrared emission from crystalline silicon, coated with erbium-doped sol–gel films, have been achieved. Phonon-assisted band-to-band emission from coated and annealed p-Si is strongest for the sample annealed at 700°C. In this paper, evidence of the origin of the emission band from the band edge recombination activities is established. Enhancement of radiative recombination of free carriers is reasoned by stresses at the interface due to the annealed sol–gel-deposited silica. Comparative studies with other strained silicon samples are presented.

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Acknowledgements

Partial support from the Deanship of Academic Research at the University of Jordan, Project Contract No. 1030 and Hamdi Mango Center for Scientific Research (HMCSR) is acknowledged with thanks. The authors would like to acknowledge Dr. Bashar Lahlouh and Dr. Sudhakar Shet for their support and interest.

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Authors and Affiliations

  1. Physics Department, CAS, The Petroleum Institute, 51133, Abu Dhabi, UAE

    S. Abedrabbo

  2. Department of Physics, The University of Jordan, Amman, 11942, Jordan

    S. Abedrabbo

  3. Interdisciplinary Program in Materials Science and Engineering, New Jersey Institute of Technology, Newark, NJ, 07102, USA

    A. T. Fiory & N. M. Ravindra

Authors
  1. S. Abedrabbo
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  2. A. T. Fiory
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  3. N. M. Ravindra
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Correspondence to N. M. Ravindra.

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Abedrabbo, S., Fiory, A.T. & Ravindra, N.M. Evidence of Silicon Band-Edge Emission Enhancement When Interfaced with SiO2:Er Films. JOM 69, 241–246 (2017). https://doi.org/10.1007/s11837-016-2207-4

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  • DOI: https://doi.org/10.1007/s11837-016-2207-4

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