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All-optical NOR gate based on injection-locking effect in a semiconductor laser

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Abstract

A scheme for all-optical NOR logic gate is proposed based on injection-locking effect in a semiconductor laser. In this scheme, signal light injection into the laser will cause frequency shift of laser modes, as a result, the probe light into the laser can be switched between injection-locked and unlocked status, and its output power will be modulated. Theoretical analysis for this scheme is carried out by using a model to describe the dynamics of the injection-locked laser. By numerical simulation, the influence of laser bias current, laser length, injected signal power and signal frequency on the output performance of NOR logic gate is quantitatively analyzed.

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Authors and Affiliations

  1. State Key Laboratory on Integrated Optoelectronics, National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China

    Han Liu-yan, Zhang Han-yi & Guo Yi-li

Authors
  1. Han Liu-yan
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  2. Zhang Han-yi
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  3. Guo Yi-li
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Corresponding author

Correspondence to Han Liu-yan.

Additional information

This work has been supported in part by National Nature Science Foundation of China (No. 6052130298 and 60432020), 863 Project (No.2006AA01Z261), 973 Project (No.2006CB302805) and Project iCHIP financed by Italian Ministry of Foreign Affairs.

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Han, Ly., Zhang, Hy. & Guo, Yl. All-optical NOR gate based on injection-locking effect in a semiconductor laser. Optoelectron. Lett. 4, 33–37 (2008). https://doi.org/10.1007/s11801-008-7129-0

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  • DOI: https://doi.org/10.1007/s11801-008-7129-0

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