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Mercury interstitial generation in ion implanted mercury cadmium telluride

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Abstract

Junction formation and stability in ion implanted mercury cadmium telluride critically depend on the ability to generate Hg interstitials. The creation of Hg interstitials is found to strongly depend on the preferred lattice position of the element implanted. Elements that substitute onto the cation sublattice create significantly more Hg interstitials than elements that sit interstitially or on the anion sublattice. Recoils from implant damage also contribute to Hg interstitial formation in heavier mass implants (Z ≥ of mass Zn), but appear to have negligible influence on interstitial generation in implants of lighter ions. The combination of implanting ions of large mass and high solubility on the cation sublattice produces strong Hg interstitial sources. Implants with these ions can form deep junctions even in heavily doped substrates. Junction stability is also improved with the stronger interstitial source.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Stanford University, 94305, Stanford, CA

    B. L. Williams

  2. Department of Electrical Engineering, Stanford University, 94305, Stanford, CA

    H. G. Robinson & C. R. Helms

Authors
  1. B. L. Williams
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  2. H. G. Robinson
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  3. C. R. Helms
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Williams, B.L., Robinson, H.G. & Helms, C.R. Mercury interstitial generation in ion implanted mercury cadmium telluride. J. Electron. Mater. 27, 583–588 (1998). https://doi.org/10.1007/s11664-998-0019-1

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  • DOI: https://doi.org/10.1007/s11664-998-0019-1

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