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Real-time stress evolution during Si1-xGex Heteroepitaxy: Dislocations, islanding, and segregation

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Abstract

We have used sensitive real-time measurements of film stress during Si1-xGex molecular beam epitaxy to examine strain relaxation due to coherent island formation, and to probe the kinetics of Ge surface segregation. We first describe our novel curvature-measurement technique for real-time stress determination. Measurements of the relaxation kinetics during high temperature Si79Ge21 growth on Si (001) are reported in which formation of highly regular arrays of [501]-faceted islands produce 20% stress relaxation. An island shape transition is also observed that reduces the effective stress by up to 50% without dislocations. Nonuniform composition profiles due to Ge surface segregation during growth of planar alloy films are determined with submonolayer thickness resolution from the real-time stress evolution. Up to two monolayers of Ge can segregate to the growth surface.

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Authors and Affiliations

  1. Sandia National Laboratories, 87185-1415, Albuquerque, NM

    J. A. Floro, E. Chason, S. R. Lee, R. D. Twesten & R. Q. Hwang

  2. Division of Engineering, Brown University, Providence, RI

    L. B. Freund

Authors
  1. J. A. Floro
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  2. E. Chason
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  3. S. R. Lee
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  4. R. D. Twesten
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  5. R. Q. Hwang
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  6. L. B. Freund
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Floro, J.A., Chason, E., Lee, S.R. et al. Real-time stress evolution during Si1-xGex Heteroepitaxy: Dislocations, islanding, and segregation. J. Electron. Mater. 26, 969–979 (1997). https://doi.org/10.1007/s11664-997-0233-2

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  • DOI: https://doi.org/10.1007/s11664-997-0233-2

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