Abstract
Significant reduction of the contact resistance of In0.7Ga0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W2N barrier layer between the Ni layer and W layer. The In0.7Ga0.3 As/Ni/W2N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C. The polycrystalline W2N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and an increase in the total area of the InxGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
M. Murakami, Mater. Res. Rep. 5, 273 (1990).
K. Kajiyama, Y. Mizushima and S. Sakata, Appl. Phys. Lett. 23, 458 (1973).
E.F. Hockings, I. Kudman, T.E. Scidel, C.M. Schmelts and E.F. Steigmeier, J. Appl. Phys. 37, 2879 (1966).
J.M. Woodall, J.L. Freeouf, G.D. Petit, T. Jackson and P. Kirchner, J. Vac. Sci. Technol. 19, 626 (1981).
T. Nittono, H. Ito, O. Nakajirna and T. Ishibashi, Jpn. J. Appl. Phys. 25, L865 (1986).
T. Nittono, H. Ito, O. Nakajima and T. Ishibashi, Jpn. J. Appl. Phys. 27, 1718(1988).
N. Watanabe, T. Nittono and H. Ito, Jpn. J. Appl. Phys. 33 L271 (1994).
Y.A. Gol'dberg and B.V. Tsarenkov, Sov. Phys. Semicon. 3, 1447(1970).
L.H. Allen, L.S. Hung, K.L. Kavanagh, J.R. Phillips, A.J. Yu and J.W. Mayer, Appl. Phys. Lett. 51, 326 (1987).
L.C. Wang, X.Z. Wang, S.S. Lau, T. Sands, W.K. Chan and T.F. Kuech, Appl. Phys. Lett. 56, 2129 (1990).
M. Murakami and W.H. Price, Appl Phys. Lett. 51, 664 (1987).
M. Murakami, Y.-C. Shih, W.H. Price, E.L. Wilkie, K.D. Childs and C.C. Parks, J. Appl. Phys. 64, 1974 (1988).
M. Murakami, W.H. Price, M. Norcott and P.-E. Hallai, J. Appl. Phys. 68, 2468 (1990).
M.C. Hugon, B. Agius, F. Varniere, M. Froment and F. Pillier, J. Appl. Phys. 72, 3570 (1992).
M. Murakami, W.H. Price, Y.-C. Shih, N. Braslau, K.D. Childs and C.C. Parks, J. Appl. Phys. 62, 3295 (1987).
H.-J. Kim, M. Murakami, W.H. Price and M. Norcott, J. Appl. Phys. 67, 4183 (1990).
H.-J. Kim, M. Murakami, S.L. Wright,M. Norcott,W.H. Price and D.L. Tulipe, J. Appl. Phys. 68, 2475 (1990).
C.J. Uchibori, M. Okunishi, T. Oku, A. Otsuki, N. Ono and M. Murakami, J. Electron. Mater. 23, 983 (1994).
M. Okunishi, C.J. Uchibori, T. Oku,A. Otsuki, N. Ono and M. Murakami, J. Electron. Mater. 24, 333 (1995).
H.H. Berger, Solid-State Electron. 15, 145 (1972).
G.S. Marlow and M.B. Das, Solid State Electron. 25, 95 (1982).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Uchibori, C.J., Ohtani, Y., Oku, T. et al. InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier. J. Electron. Mater. 26, 410–414 (1997). https://doi.org/10.1007/s11664-997-0111-y
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-997-0111-y