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Effect of the Compliance Current on the Retention Time of Cu/HfO2-Based Memristive Devices

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Abstract

Compliance current plays a very important role in the retention performance of memristive devices. Although it was established that low and high compliance currents lead to volatile and nonvolatile behavior, respectively, studying the influence of the intermediate compliance current as a method to control the retention has not been widely explored. This is an interesting feature because the memristive devices have captured the attention of the scientific community for the development of a broad spectrum of new applications beyond memory. In this work, the effect of the intermediate compliance current in forming-free Cu/HfO2-based memristive devices is investigated. Here we show the existence of an intermediate compliance current window between the volatile and nonvolatile operating regions wherein the device holds the retention for a short time in a stochastic mode. Furthermore, the variation in the retention time is evaluated with respect to different device electrical parameters including the charge, flux, run history, and ON-state resistance, as well as the switching time of the device. The results show that the retention time controlled by an intermediate compliance current exhibits substantial variation, and the cycle-to-cycle stochasticity in the retention time can be a representative quality parameter for the development of security-related applications.

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Acknowledgments

This work is funded by the United Arab Emirates Space Agency, Space Missions Science and Technology Directorate, Project Reference K08-2016-001. The proposed project is in line with the United Arab Emirates Space Agency’s Space Science, Technology and Innovation (ST&I) Roadmap which aims at developing enabling technologies for space exploration that are intended to accomplish the objectives of the UAE Space Strategy. The authors also acknowledge the access to the electron microscopy suite through the KU-Research Laboratories, for conducting all electrical and material characterization studies, respectively. The authors acknowledge Dr. Anas Alazzam for providing access to the MEMS at KU for device fabrication.

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  1. Electrical Engineering and Computer Science Department, Khalifa University of Science and Technology, Abu Dhabi, UAE

    Khaled Humood, Sueda Saylan & Baker Mohammad

  2. Chemistry Department, Khalifa University of Science and Technology, Abu Dhabi, UAE

    Maguy Abi Jaoude

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  1. Khaled Humood
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Humood, K., Saylan, S., Mohammad, B. et al. Effect of the Compliance Current on the Retention Time of Cu/HfO2-Based Memristive Devices. Journal of Elec Materi 50, 4397–4406 (2021). https://doi.org/10.1007/s11664-021-08995-5

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