Abstract
The experimental forward current–voltage–temperature (ID–VD–T) characteristics of Mo/4H-SiC Schottky barrier diodes are investigated by means of a careful simulation study. The simulations are in excellent agreement with measurements in the whole explored current range extending over ten orders of magnitude for temperatures from 303 K to 498 K. The diode ideality factor tends to decrease while the Schottky barrier height increases with increasing temperature. These variations are explained on the basis of the thermionic emission theory with a Gaussian distribution of the barrier height around the Mo/4H-SiC interface. The calculated Richardson constant is A* = 155.78 A cm−2 K−2 which is very close to the theoretical value of 146 A cm−2 K−2 expected for n-type 4H-SiC. The linear dependence of VD on temperature is also investigated for several bias currents. The obtained results reveal that the device is well suited for temperature-sensing applications, showing a good coefficient of determination (R2 = 0.99974 for 100 nA ≤ ID ≤ 1 mA) and a high sensitivity (S = 1.92 mV K−1 for ID = 1 μA). The temperature error between the voltage measurements and their linear best fit is lower than 1.5 K.
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F.G. Della Corte, G. De Martino, F. Pezzimenti, G. Adinolfi, and G. Graditi, IEEE Trans. Electron Dev. 65, 3352 (2018).
A. Leon-Masich, H. Valderrama-Blavi, J.M. Bosque-Moncusi, and L. Martinez-Salamero, IEEE Trans. Power Electron. 31, 1633 (2015).
H. Bencherif, L. Dehimi, F. Pezzimenti, and F.G. Della Corte, Appl. Phys. A Mater. 125, 294 (2019).
G. De Martino, F. Pezzimenti, and F.G. Della Corte, in Proceedings of the International Semiconductor Conference—CAS (2018), pp. 147–150.
J. Fabre, P. Ladoux, and M. Piton, IEEE Trans. Power Electron. 30, 4079 (2014).
F. Pezzimenti, S. Bellone, F.G. Della Corte, and R. Nipoti, Mater. Sci. Forum 740, 942 (2013).
H. Bencherif, L. Dehimi, F. Pezzimenti, G. De Martino, and F.G. Della Corte, J. Electron. Mater. 48, 3871 (2019).
M. Mansoor, I. Haneef, S. Akhtar, A. De Luca, and F. Udrea, Sens. Actuators A Phys. 232, 63 (2015).
S. Rao, G. Pangallo, F. Pezzimenti, and F.G. Della Corte, IEEE Electron Dev. Lett. 36, 720 (2015).
F. Bouzid, L. Dehimi, and F. Pezzimenti, J. Electron. Mater. 46, 6563 (2017).
G. Pristavu, M. Badila, F. Draghici, R. Pascu, F. Craciunoiu, I. Rusu, and A. Pribeanu, Mater. Sci. Forum 897, 606 (2017).
F. Bouzid, L. Dehimi, F. Pezzimenti, M. Hadjab, and A.H. Larbi, Superlattice Microstruct. 122, 57 (2018).
N. Zhang, C. Lin, D. Senesky, and A. Pisano, Appl. Phys. Lett. 104, 073504 (2014).
K. Zekentes, and K. Vasilevskiy, in Advancing Silicon Carbide Electronics Technology I: Metal Contacts to Silicon Carbide: Physics, Technology, Applications (Milleserville: Materials Research Forum LLC, 2018).
S. Kyoung, E.S. Jung, and M.Y. Sung, Microelectron. Eng. 154, 69 (2016).
D. Perrone, M. Naretto, S. Ferrero, L. Scaltrito, and C. Pirri, Mater. Sci. Forum 615, 647 (2009).
L. Boussouar, Z. Ouennoughi, N. Rouag, A. Sellai, R. Weiss, and H. Ryssel, Microelectron. Eng. 88, 969 (2011).
CREE Research Inc. Durham, NC, USA http://www.cree.com. Accessed 1 March 2019.
Silvaco Int., Atlas User’s Manual, Device Simulator Software (2016).
X. Li, Y. Luo, L. Fursin, J.H. Zhao, M. Pan, P. Alexandrov, and M. Wein, Solid State Electron. 47, 233 (2003).
M. Ruff, H. Mitlehner, and R. Helbig, IEEE Trans. Electron Dev. 41, 1040 (1994).
F. Pezzimenti, L.F. Albanese, S. Bellone, and F.G. Della Corte, in Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting—BCTM (2009), pp. 214–217.
U. Lindefelt, J. Appl. Phys. 84, 2628 (1998).
S. Selberherr, Analysis and Simulation of Semiconductor Devices (Wien: Springer, 1984).
A. Galeckas, J. Linnros, V. Grivickas, U. Lindefelf, and C. Hallin, Appl. Phys. Lett. 71, 3269 (1997).
P.T. Landsberg and G.S. Kousik, J. Appl. Phys. 56, 1696 (1984).
F. Pezzimenti, IEEE Trans. Electron Dev. 60, 1404 (2013).
M. Bakowski, U. Gustafsson, and U. Lindefelt, Phys. Stat. Sol. (a) 162, 421 (1997).
M. Roschke and F. Schwierz, IEEE Trans. Electron Dev. 48, 1442 (2001).
F. Pezzimenti, and F.G. Della Corte, in Proceedings of the Mediterranean Electrotechnical Conference—MELECON (2010), pp. 1129–1134.
S.M. Sze, Physics of Semiconductor Devices, 2nd ed. (New York: Wiley, 1982).
M. Philip, and A. O’Neill, in Proceedings of the IEEE Conferences on Optoelectronic and Microelectronic Materials and Devices (2006), pp. 137–140.
A. Fritah, L. Dehimi, F. Pezzimenti, A. Saadoune, and B. Abay, J. Electron. Mater. 48, 3692 (2019).
F. Pezzimenti, H. Bencherif, A. Yousfi, and L. Dehimi, Solid-State Electron. 161, 107642 (2019).
Y. Marouf, L. Dehimi, F. Bouzid, F. Pezzimenti, and F.G. Della Corte, Optik 163, 22 (2018).
M.L. Megherbi, F. Pezzimenti, L. Dehimi, M.A. Saadoune, and F.G. Della Corte, IEEE Trans. Electron Dev. 65, 3371 (2018).
K. Zeghdar, L. Dehimi, F. Pezzimenti, S. Rao, and F. Della Corte, Jpn. J. Appl. Phys. 58, 014002 (2019).
M.L. Megherbi, F. Pezzimenti, L. Dehimi, A. Saadoune, and F.G. Della Corte, J. Electron. Mater. 47, 1414 (2018).
G. De Martino, F. Pezzimenti, F.G. Della Corte, G. Adinolfi, and G. Graditi, in Proceedings of the IEEE International Conference Ph.D. Research in Microelectronics and Electronics—PRIME (2017), pp. 221–224.
F. Pezzimenti, and F.G. Della Corte, in Proceedings of the International Semiconductor Conference—CAS (2012), pp. 347–350.
F.G. Della Corte, F. Pezzimenti, S. Bellone, and R. Nipoti, Mater. Sci. Forum 679, 621 (2011).
M.L. Megherbi, F. Pezzimenti, L. Dehimi, S. Rao, and F.G. Della Corte, Solid-State Electron. 109, 12 (2015).
H. Cetin and E. Ayyildiz, Phys. B 405, 559 (2010).
F. Bouzid, F. Pezzimenti, L. Dehimi, M.L. Megherbi, and F.G. Della Corte, Jpn. J. Appl. Phys. 56, 094301 (2017).
M.J. Bozack, Phys. Status Solidi B 202, 549 (1997).
S.K. Cheung and N.W. Cheung, Appl. Phys. Lett. 49, 85 (1986).
Q.W. Song, Y.M. Zhang, Y.M. Zhang, F.P. Chen, and X.Y. Tang, Chin. Phys. B 20, 057301 (2011).
J.H. Werner and H.H. Guttler, J. Appl. Phys. 69, 1522 (1991).
D.J. Ewing, Q. Wahab, R.R. Ciechonski, M. Syvajarvi, R. Yakimova, and L.M. Porter, Semicond. Sci. Technol. 22, 1287 (2007).
J.M. Bluet, D. Ziane, G. Guillot, D. Tournier, P. Brosselard, J. Montserrat, and P. Godignon, Superlattice Microstruct. 40, 399 (2006).
M.E. Aydin, N. Yildirim, and A. Türüt, J. Appl. Phys. 102, 043701 (2007).
N.J.D. Nagelkerke, Biometrika 78, 691 (1991).
F. Draghici, G. Brezeanu, G. Pristavu, R. Pascu, M. Badila, A. Pribeanu, and E. Ceuca, Sensors 19, 2384 (2019).
L. Di Benedetto, G.D. Licciardo, S. Rao, G. Pangallo, F. Della Corte, and A. Rubino, IEEE Trans. Electron Dev. 65, 687 (2018).
R. Radetić, M. Pavlov-Kagadejev, and N. Milivojević, Serb. J. Electr. Eng. 12, 345 (2015).
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Zeghdar, K., Dehimi, L., Pezzimenti, F. et al. Analysis of the Electrical Characteristics of Mo/4H-SiC Schottky Barrier Diodes for Temperature-Sensing Applications. J. Electron. Mater. 49, 1322–1329 (2020). https://doi.org/10.1007/s11664-019-07802-6
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DOI: https://doi.org/10.1007/s11664-019-07802-6