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Nanoscale High-k Dielectrics for Junctionless Nanowire Transistor for Drain Current Analysis

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Abstract

Hafnium oxide (HfO2) nanoparticles were prepared by a chemical precipitation method and its physical and electrical properties were investigated. HfO2 thin films were prepared via a dip-coating method using the synthesized HfO2 nanoparticles. The crystallinity and resistivity of both prepared thin films were analysed by x-ray diffraction and impedance analyser. The crystalline size was found to be 8 nm and 13 nm for HfO2 and SiO2 thin films, respectively. The electrical (bulk) resistance was calculated by fitting the complex impedance plane using z-view software, and was found to be 2.15 × 107 Ω for HfO2, whereas it was found to be 3.6 × 105 Ω for SiO2 thin films. Junctionless nanowire transistors were implemented using HfO2 dielectric and performance was compared to SiO2 gate dielectric. The results revealed that nano-sized HfO2 proves to be a better gate dielectric material than conventional gate dielectrics. Thus, the nano-sized HfO2 based junctionless transistor device is more suitable for future low power applications.

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Authors and Affiliations

  1. VLSI Research Lab, Department of Electronics and Communication Engineering, Kalasalingam Academy of Research and Education, Krishnankoil, Tamil Nadu, India

    J. Charles Pravin

  2. Department of Electronics and Communication Engineering, Providence College of Engineering, Chengannur, Kerala, India

    P. Prajoon

  3. VLSI Laboratory, Department of Electronics and Communication Engineering, Karunya Institute of Technology and Sciences, Coimbatore, Tamil Nadu, India

    Flavia Princess Nesamania & D. Nirmal

  4. Material Chemistry Laboratory, Department of Chemistry, Karunya University, Coimbatore, Tamil Nadu, India

    G. Srikesh

  5. Department of Physics, KPR Institute of Engineering and Technology, Coimbatore, Tamil Nadu, India

    P. Senthil Kumar

Authors
  1. J. Charles Pravin
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  2. P. Prajoon
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  3. Flavia Princess Nesamania
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  4. G. Srikesh
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  5. P. Senthil Kumar
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  6. D. Nirmal
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Correspondence to D. Nirmal.

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Pravin, J.C., Prajoon, P., Nesamania, F.P. et al. Nanoscale High-k Dielectrics for Junctionless Nanowire Transistor for Drain Current Analysis. J. Electron. Mater. 47, 2679–2686 (2018). https://doi.org/10.1007/s11664-018-6075-2

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  • DOI: https://doi.org/10.1007/s11664-018-6075-2

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