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Study of Deep Ultraviolet Light-Emitting Diodes with a p-AlInN/AlGaN Superlattice Electron-Blocking Layer

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Abstract

The AlGaN-based deep ultraviolet light-emitting diodes with a p-type Al0.92In0.08N/Al0.55Ga0.45N superlattice electron-blocking layer are studied numerically. The energy band diagrams, radiative recombination rate, electron leakage current, light output power and internal quantum efficiency are investigated. The simulation results show the structure has a low electron leakage current and high hole injection efficiency compared to the original deep ultraviolet light-emitting diodes, which is ascribed to the deep ultraviolet light-emitting diodes with a p-type Al0.92In0.08N/Al0.55Ga0.45N superlattice electron-blocking layer having a low polarization effect on the interface between the last quantum barrier and the electron-blocking layer. As a result, the radiative recombination rate and the light output power are significantly enhanced.

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Acknowledgements

This project was supported by the Science and Technology Program Project for the Innovation of Forefront and Key Technology of Guangdong Province, China (Grant Nos. 2014B010121001, 2014B010119004, 2013B010204065, HD15PT003), and the Special Project for Key Science and Technology of Zhongshan City, Guangdong Province, China (Grant Nos. 2014A2FC204).

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Authors and Affiliations

  1. Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou, 510631, China

    Jing Huang, Zhiyou Guo, Min Guo, Yang Liu, Shunyu Yao, Jie Sun & Huiqing Sun

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  1. Jing Huang
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  2. Zhiyou Guo
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  3. Min Guo
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  4. Yang Liu
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  5. Shunyu Yao
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  6. Jie Sun
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  7. Huiqing Sun
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Correspondence to Zhiyou Guo.

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Huang, J., Guo, Z., Guo, M. et al. Study of Deep Ultraviolet Light-Emitting Diodes with a p-AlInN/AlGaN Superlattice Electron-Blocking Layer. J. Electron. Mater. 46, 4527–4531 (2017). https://doi.org/10.1007/s11664-017-5413-0

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  • DOI: https://doi.org/10.1007/s11664-017-5413-0

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