Abstract
Here we report the enhancement in the temperature coefficient of resistance (TCR) of atomic layer-deposited vanadium oxide thin films through the doping of titanium oxide. The Hall effect measurement provides a potential explanation for the phenomenon. The composition and morphology of the thin films are investigated by x-ray diffraction and scanning electron microscopy techniques. The high TCR, good uniformity, and low processing temperature of the material make it a good candidate for thermistor application.
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Acknowledgements
The authors thank the funding support from NSF (IDBR #1530508) and Abbvie Inc. This research used resources of the Center for Functional Nanomaterials, which is a U.S. DOE Office of Science Facility, at Brookhaven National Laboratory under Contract No. DE-SC0012704. We also thank Dr. Fernando Camino of CFN for the help and useful discussion.
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Wang, S., Yu, S., Lu, M. et al. Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications. J. Electron. Mater. 46, 2153–2157 (2017). https://doi.org/10.1007/s11664-016-5150-9
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DOI: https://doi.org/10.1007/s11664-016-5150-9