Abstract
Magnesium silicide (Mg2Si) compounds doped with 8000 ppm Sb were prepared using different Si sources via liquid–solid reaction synthesis and hot pressing. The Si sources were solar-grade Si, metal-grade Si, and sludge Si. The Si sludge generated during the cutting of Si wafers was recycled as a Si source. The x-ray diffraction (XRD) patterns of the Si sludge corresponded to Si, silicon dioxide (SiO2), and C, whereas the solar-grade Si and metal-grade Si were indexed as a single Si phase. For the sintered compact samples, the Mg2Si phase was predominant in all the samples. However, small amounts of impurity phases, MgO and SiC, were identified in the sintered Mg2Si that used sludge Si. The thermoelectric properties of the Mg2Si produced using solar-grade Si or metal-grade Si were almost the same at the measured temperature. The efficacy of the low-purity metal-grade Si was demonstrated. However, the power factor and thermal conductivity of the Mg2Si produced using sludge Si were smaller than those of the other samples over the entire measured temperature range. However, the maximum value of ZT was almost the same.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
V.E. Borisenko, Semiconducting Silicides (Berlin: Springer, 2000), p. 287.
D.M. Rowe, Thermoelectrics Handbook Macro to Nano (Boca Raton: CRC Press, 2006), ch. 29.
J. Tani and H. Kido, Phys. B 364, 218 (2005).
J. Tani and H. Kido, Intermetallics 15, 1202 (2007).
G.S. Nolas, D. Wang, and M. Beekman, Phys. Rev. B 76, 235204 (2007).
M. Akasaka, T. Iida, A. Matsumoto, K. Yamanaka, Y. Takanashi, T. Imai, and N. Hamada, J. Appl. Phys. 104, 013703 (2008).
N. Fukushima, T. Iida, M. Akasaka, T. Nemoto, T. Sakamoto, R. Kobayashi, H. Taguchi, K. Nishio, and Y. Takanashi, Mater. Res. Soc. Symp. Proc. 1166, 147 (2009).
T. Sakamoto, T. Iida, A. Matsumoto, Y. Honda, T. Nemoto, J. Sato, T. Nakajima, H. Taguchi, and Y. Takanashi, J. Electron. Mater. 39, 1708 (2010).
J.-Y. Jung, K.-H. Park, and I.-H. Kim, IOP Conf. Ser. 18, 142006 (2011).
S.-M. Choi, K.-H. Kim, I.-H. Kim, S.-U. Kim, and W.-S. Seo, Curr. Appl. Phys. 11, S388 (2011).
S.-W. You and I.-H. Kim, Curr. Appl. Phys. 11, S392 (2011).
S.K. Bux, E.S. Toberer, G.J. Snyder, R.B. Kanerb, and J.-P. Fleuriala, J. Mater. Chem. 21, 12259 (2011).
M. Ioannou, G. Polymeris, E. Hatzikraniotis, A.U. Khan, K.M. Paraskevopoulos, and Th Kyratsi, J. Electron. Mater. 42, 1827 (2013).
S. Fiameni, S. Battiston, S. Boldrini, A. Famengo, F. Agresti, S. Barison, and M. Fabrizio, J. Solid State Chem. 193, 142 (2012).
H. Udono, H. Tajima, M. Uchikoshi, and M. Itakura, Jpn. J. Appl. Phys. 54, 07JB06 (2015).
Y. Isoda, S. Tada, T. Nagai, H. Fujiu, and Y. Shinohara, J. Electron. Mater. 39, 1531 (2010).
H.T. Kaibe, L. Rauscher, S. Fujimoto, T. Kurosawa, T. Kanda, M. Mukoujima, I. Aoyama, H. Ishimabushi, K. Ishida, and S. Sano, Proceedings of 23rd International Conference on Thermoelectrics, Adelaide, Australia, 2004, pp. 2994.
T. Nemoto, T. Iida, J. Sato, T. Sakamoto, T. Nakajima, and Y. Takanashi, J. Electron. Mater. 41, 1312 (2012).
B.R. Bathey and M.C. Cretella, J. Mater. Sci. 17, 3077 (1982).
Y. Hayatsu, T. Iida, T. Sakamoto, S. Kurosaki, K. Nishio, Y. Kogo, and Y. Takanashi, J. Solid State Chem. 193, 161 (2012).
K. Uemura and I.A. Nishida, Thermoelectric Semiconductors and Their Applications (Nikkan-Kogyo: Tokyo, 1988), p. 180.
A. Kato, T. Yagi, and N. Fukusako, J. Phys. Condens. Matter. 21, 205801 (2009).
W. Liu, X. Tang, H. Li, J. Sharp, X. Zhou, and C. Uher, Chem. Mater. 23, 5256 (2011).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Isoda, Y., Tada, S., Kitagawa, H. et al. Thermoelectric Properties of Sb-Doped Mg2Si Prepared Using Different Silicon Sources. J. Electron. Mater. 45, 1772–1778 (2016). https://doi.org/10.1007/s11664-015-4214-6
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-015-4214-6