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Evaluation of HgCdTe on GaAs Grown by Molecular Beam Epitaxy for High-Operating-Temperature Infrared Detector Applications

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Abstract

Molecular beam epitaxy (MBE) growth of HgCdTe (MCT) on alternative substrates enables production of both cheaper and more versatile (third-generation) infrared (IR) detectors. After rapid progress in the development of MBE-grown MCT on GaAs in recent years, the question of whether the considerable benefits of this material system are also applicable to high-operating-temperature (HOT) applications demands attention. In this paper, we present a mid-wavelength-IR 640 × 512 pixel, 15-μm-pitch focal-plane array with operability of 99.71% at operating temperature of 120 K and low dark current density. In the second part of the paper, MBE growth of short-wavelength IR material with Cd fraction of up to 0.8 is investigated as the basis for future evaluation of the material for low-light-level imaging HOT applications.

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Authors and Affiliations

  1. AIM INFRAROT-MODULE GmbH, Theresienstrasse 2, 74072, Heilbronn, Germany

    J. Wenisch, W. Schirmacher, R. Wollrab, D. Eich,  S. Hanna, R. Breiter, H. Lutz & H. Figgemeier

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  1. J. Wenisch
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  2. W. Schirmacher
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  3. R. Wollrab
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  4. D. Eich
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  5. S. Hanna
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  6. R. Breiter
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  7. H. Lutz
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  8. H. Figgemeier
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Correspondence to J. Wenisch.

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Wenisch, J., Schirmacher, W., Wollrab, R. et al. Evaluation of HgCdTe on GaAs Grown by Molecular Beam Epitaxy for High-Operating-Temperature Infrared Detector Applications. J. Electron. Mater. 44, 3002–3006 (2015). https://doi.org/10.1007/s11664-015-3713-9

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  • DOI: https://doi.org/10.1007/s11664-015-3713-9

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