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Estimation of Density of Localized States in Amorphous Se80Te20 and Se80Te10M10 (M = Cd, In, Sb) Alloys Using AC Conductivity Measurements

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Abstract

The ac conductivity of amorphous Se80Te20 (a-Se80Te20) and amorphous Se80Te10M10 (a-Se80Te10M10) alloys has been measured as a function of temperature and frequency in a low-temperature regime. An analysis of the experimental data confirms that ac conductivity is reasonably well interpreted by the Austin–Mott model. The density of localized states was determined in the low-temperature region from 201 K to 280 K. Possible explanations of “metal-induced effects” on the conduction mechanism of a-Se80Te20 alloy are discussed.

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Authors and Affiliations

  1. Department of Physics, Banaras Hindu University, Varanasi, 221005, India

    N. Chandel & N. Mehta

  2. Department of Physics, Harcourt Butler Technological Institute, Kanpur, 208002, India

    A. Kumar

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  1. N. Chandel
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  2. N. Mehta
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  3. A. Kumar
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Correspondence to N. Mehta.

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Chandel, N., Mehta, N. & Kumar, A. Estimation of Density of Localized States in Amorphous Se80Te20 and Se80Te10M10 (M = Cd, In, Sb) Alloys Using AC Conductivity Measurements. J. Electron. Mater. 44, 2585–2591 (2015). https://doi.org/10.1007/s11664-015-3693-9

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  • DOI: https://doi.org/10.1007/s11664-015-3693-9

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