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Optoelectronic Properties of ZnO Nanoparticle/Pentacene Heterojunction Photodiode

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Abstract

We fabricated photodiodes based on planar heterojunctions of zinc oxide (ZnO) nanoparticles (NPs, ∼5 nm) and pentacene. The current density–voltage (J–V) characteristics of the photodiodes were investigated in the dark and under illumination. The photodiodes had good rectifying behavior in the dark and under illumination. A high rectification ratio (RR) of 878 at ±1.75 V and a low turn-on voltage of 1.3 V were achieved in the dark. Under 100 mW/cm2 illumination, an RR of 55.3 was obtained at ±1.90 V. Furthermore, the photoresponsive mechanism of the device was explained in terms of the schematic band diagram and the transport of charge carriers in the device.

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Authors and Affiliations

  1. School of Physics and Electronic Information Engineering, Shaanxi University of Technology, Hanzhong, 723001, People’s Republic of China

    Zhaolin Yuan, Mingxing Fu & Yajie Ren

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  1. Zhaolin Yuan
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  2. Mingxing Fu
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  3. Yajie Ren
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Correspondence to Zhaolin Yuan.

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Yuan, Z., Fu, M. & Ren, Y. Optoelectronic Properties of ZnO Nanoparticle/Pentacene Heterojunction Photodiode. J. Electron. Mater. 43, 3270–3275 (2014). https://doi.org/10.1007/s11664-014-3268-1

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  • DOI: https://doi.org/10.1007/s11664-014-3268-1

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