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Electrical Characteristics of Al/Poly(methyl methacrylate)/p-Si Schottky Device

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Abstract

Al/Poly(methyl methacrylate)(PMMA)/p-Si organic Schottky devices were fabricated on a p-Si semiconductor wafer by spin coating of PMMA solution. The capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics of Al/PMMA/p-Si structures have been investigated in the frequency range of 1 kHz–10 MHz at room temperature. The diode parameters such as ideality factor, series resistance and barrier height were calculated from the forward bias current–voltage (I–V) characteristics. In order to explain the electrical characteristics of metal–polymer–semiconductor (MPS) with a PMMA interface, the investigation of interface states density and series resistance from C–V and G–V characteristics in the MPS structures with thin interfacial insulator layer have been reported. The measurements of capacitance (C) and conductance (G) were found to be strongly dependent on bias voltage and frequency for Al/PMMA/p-Si structures. The values of interface state density (D it) were calculated. These values of D it and series resistance (R s) were responsible for the non-ideal behavior of I–V and C–V characteristics.

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References

  1. C.W. Tang, Appl. Phys. Lett. 48, 183 (1986).

    Article  Google Scholar 

  2. J. Puigdollers, C. Voz, A. Orpella, R. Quidant, I. Martın, M. Vetter, and R. Alcubilla, Org. Electron. 5, 67 (2004).

    Article  Google Scholar 

  3. D.Y. Sasaki, S. Singh, J.D. Cox, and P.I. Pohl, Sens. Actuators B Chem. 72, 51 (2001).

    Article  Google Scholar 

  4. T.M. Long, S. Prakash, M.A. Shannon, and J.S. Moore, Langmuir 22, 4104 (2006).

    Article  Google Scholar 

  5. Y. Li, H. Wang, and M. Yang, Sens. Actuators B Chem. 121, 496 (2007).

    Article  Google Scholar 

  6. M. Matsuguchi and T. Uno, Sens. Actuators B Chem. 113, 94 (2006).

    Article  Google Scholar 

  7. O.V. Vassiltsova, Z. Zhao, M.A. Petrukhina, and M.A. Carpenter, Sens. Actuators B Chem. 123, 522 (2007).

    Article  Google Scholar 

  8. Z. Bao, Adv. Mater. 12, 227 (2000).

    Article  Google Scholar 

  9. M. Halik, H. Klauk, U. Zschieschang, G. Schmid, W. Radlik, and W. Weber, Adv. Mater. 14, 1717 (2002).

    Article  Google Scholar 

  10. J. Veres, S. Ogier, G. Lloyd, and D. de Leeuw, Chem. Mater. 16, 4543 (2004).

    Article  Google Scholar 

  11. J. Yuan, J. Zhang, J. Wang, X. Yan, and C. Yan, Appl. Phys. Lett. 82, 3967 (2003).

    Article  Google Scholar 

  12. J. Veres, S.M. Ogier, S.W. Leeming, D.C. Cupertino, and S.M. Khaffaf, Adv. Funct. Mater. 13, 199 (2004).

    Article  Google Scholar 

  13. L. Yang, W. Hui-cai, and Y. Mu-jie, Sens. Actuators B Chem. 121, 496 (2007).

    Article  Google Scholar 

  14. S.M. Sze, Physics of Semiconductor Devices, 2nd ed. (New York: Wiley, 1981).

    Google Scholar 

  15. E.H. Rhoderick and R.H. Williams, Metal-Semiconductor Contacts (Clarendon: Oxford Press, 1988).

    Google Scholar 

  16. R. Gupta, S.C.K. Misra, B.D. Malhotra, N.N. Beladakere, and S. Chandra, Appl. Phys. Lett. 58, 51 (1991).

    Article  Google Scholar 

  17. N. Tugluoglu, S. Karadeniz, A.B. Selcuk, and S.B. Ocak, Phys. B 400, 68 (2007).

    Article  Google Scholar 

  18. M.E. Aydin and F. Yakuphanoglu, Microelectron. Eng. 85, 1836 (2008).

    Article  Google Scholar 

  19. K.R. Rajesh and C.S. Menon, J. Non-Cryst. Solids. 353, 398 (2007).

    Article  Google Scholar 

  20. C. Tang and S. VanSlyke, Appl. Phys. Lett. 51, 913 (1987).

    Article  Google Scholar 

  21. S.K. Cheung and N.W. Cheung, Appl. Phys. Lett. 49, 85 (1986).

    Article  Google Scholar 

  22. H. Norde, J. Appl. Phys. 50, 5052 (1979).

    Article  Google Scholar 

  23. T. Kilicoglu, M.E. Aydin, and Y.S. Ocak, Phys. B 388, 244 (2007).

    Article  Google Scholar 

  24. Ö. Güllü and A. Türüt, J. Appl. Phys. 106, 103717 (2009).

    Article  Google Scholar 

  25. M.E. Aydin, F. Yakuphanoglu, and T. Kılıcoğlu, Synth. Met. 157, 1080 (2007).

    Article  Google Scholar 

  26. S.R. Forrest, M.L. Kaplan, P.H. Schmidt, W.L. Feldmann, and E. Yanowski, Appl. Phys. Lett. 41, 90 (1982).

    Article  Google Scholar 

  27. R.K. Gupta and R.A. Singh, Mater. Chem. Phys. 86, 279 (2004).

    Article  Google Scholar 

  28. M.E. Aydin, T. Kilicoglu, K. Akkilic, and H. Hosgoren, Phys. B 381, 113 (2006).

    Article  Google Scholar 

  29. S.R. Forrest, M.L. Kaplan, and P.H. Schmidt, J. Appl. Phys. 55, 1492 (1984).

    Article  Google Scholar 

  30. S. Antohe, N. Tomozeiu, and S. Gogonea, Phys. Status Solidi A 125, 397 (1991).

    Article  Google Scholar 

  31. W.-K. Hong, S. Song, D.-K. Hwang, S.-S. Kwon, G. Jo, S.-J. Park, and T. Lee, Appl. Surf. Sci. 254, 7559 (2008).

    Article  Google Scholar 

  32. T. Kilicoglu, M.E. Aydın, G. Topal, M.A. Ebeoglu, and H. Saygılı, Synth. Met. 157, 540 (2007).

    Article  Google Scholar 

  33. O. Gullu, S. Aydogan, and A. Turut, Microelectron. Eng. 85, 1647 (2008).

    Article  Google Scholar 

  34. Ö.F. Yüksel, S.B. Ocak, and A.B. Selcuk, Vacuum 82, 1183 (2008).

    Article  Google Scholar 

  35. E.H. Nicollian and A. Goetzberger, Bell Syst. Tech. J. 46, 1055 (1967).

    Article  Google Scholar 

  36. M. Cakar, N. Yıldırım, H. Dogan, and A. Turut, Appl. Surf. Sci. 253, 3464 (2007).

    Article  Google Scholar 

  37. M.E. Aydın and A. Turut, Microelectron. Eng. 84, 2875 (2007).

    Article  Google Scholar 

  38. X. Yan, H. Wang, and D. Yan, Thin Solid Films 515, 2655 (2006).

    Article  Google Scholar 

  39. O. Gullu, A. Turut, and S. Asubay, J. Phys.: Condens. Matter 20, 045215 (2008).

    Google Scholar 

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Authors and Affiliations

  1. Sarakoy Nuclear Research and Training Centre, Saray, Kazan, 06983, Ankara, Turkey

    A.B. Selçuk

  2. Graduate School of Natural and Applied Sciences, Gazi University, Ankara, Turkey

    S. Bilge Ocak, F.G. Aras & E. Oz Orhan

Authors
  1. A.B. Selçuk
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  2. S. Bilge Ocak
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  3. F.G. Aras
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  4. E. Oz Orhan
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Correspondence to S. Bilge Ocak.

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Selçuk, A., Bilge Ocak, S., Aras, F. et al. Electrical Characteristics of Al/Poly(methyl methacrylate)/p-Si Schottky Device. J. Electron. Mater. 43, 3263–3269 (2014). https://doi.org/10.1007/s11664-014-3267-2

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  • DOI: https://doi.org/10.1007/s11664-014-3267-2

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