Abstract
The electronic and thermoelectric properties of biaxially strained magnesium silicide Mg2Si are analyzed by means of first-principle calculations and semiclassical Boltzmann theory. Electron and hole doping are examined for different doping concentrations and temperatures. Under strain the degeneracy of the electronic orbitals near the band edges is removed, the orbital bands are warped, and the energy gap closes up. These characteristics are rationalized in the light of the electron density transfers upon strain. The electrical conductivity increases with the biaxial strain, whereas neither the Seebeck coefficient nor the power factor (PF) follow this trend. Detailed analysis of the evolution of these thermoelectric properties is given in terms of the in-plane and cross-plane components. Interestingly, the maximum value of the PF is shifted towards lower temperatures when increasingly intensive strain is applied.
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Acknowledgements
Part of the computations were performed at the Mésocentre d’Aix-Marseille Université (Project Number 13b020). This work was also granted access to the HPC resources of Centre Informatique National de l’Enseignement Supérieur (CINES), Montpellier, France under allocation C2013086881 made by Grand Equipement National de Calcul Intensif (GENCI). The authors are grateful to the EADS foundation for funding Hilal Balout’s PhD thesis.
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Balout, H., Boulet, P. & Record, MC. Effect of Biaxial Strain on Electronic and Thermoelectric Properties of Mg2Si. J. Electron. Mater. 42, 3458–3466 (2013). https://doi.org/10.1007/s11664-013-2793-7
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DOI: https://doi.org/10.1007/s11664-013-2793-7