Abstract
We report a simplified sequential evaporation route that can deposit compositionally controllable Bi-Te thermoelectric (TE) thin films without the need for a highly controlled facility. Te and Bi granules were used as starting materials, with their ratio being adjusted to obtain Bi-Te films with different compositions and thicknesses. The as-evaporated and annealed films were subjected to structural and morphological analysis, and their transport properties were measured. X-Ray diffraction data revealed multiple phases for most films. Energy-dispersive x-ray spectroscopy showed that the film composition was Te-enriched due to the large vapor pressure difference of Te and Bi. A Bi2Te3 single phase was obtained in the annealed films, having nominal composition of BiTe1.2. The existence of impurity phases, such as Bi4Te3 or elemental Te, was found in all the as-evaporated films and in the annealed films with other nominal Te/Bi ratios, which degraded the TE properties of the films by increasing their electrical conductivity and reducing their Seebeck coefficient. A pure Bi2Te3 film with nominal Te/Bi ratio of 1.2 exhibited a maximum power factor of 7.9 × 10−4 W m−1 K2 after annealing at 200°C. This work demonstrated a simple, undemanding, reliable method to deposit Bi-Te-based TE thin films that can be utilized to fabricate low-cost TE microgenerators.
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Zhou, A.J., Feng, L.D., Cui, H.G. et al. Sequential Evaporation of Bi-Te Thin Films with Controllable Composition and Their Thermoelectric Transport Properties. J. Electron. Mater. 42, 2184–2191 (2013). https://doi.org/10.1007/s11664-013-2568-1
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DOI: https://doi.org/10.1007/s11664-013-2568-1