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Development of a Measurement System for the Figure of Merit in the High-Temperature Region

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Abstract

New equipment has been developed for evaluating the figure of merit, ZT, on the basis of the Harman method in the temperature range between room temperature and 650 K. In this temperature range, the sample holder in the vacuum chamber has a different construction as compared with the sample holder constructed for the temperature range below room temperature. Several issues that need to be considered, such as compensation for the thermal radiation effect, suppression of heat leakage from the lead wires, and the setup method for the lead wires on the sample, are examined in the considered temperature region. Evaluations of ZT are successfully made for typical thermoelectric materials, (Bi,Sb)2Te3 and CeFe3CoSb12. We then demonstrate that the influence of thermal radiation between the high- and low-temperature edges of the sample induced by the Peltier effect on the estimated value of ZT is negligible at around 600 K. Furthermore, the change in the thermoelectric properties due to repetition of the thermal cycle is studied, and a typical hysteresis behavior is observed in the considered thermoelectric materials. It is revealed that heating the sample to a high temperature causes a change in its thermoelectric properties, which one must take into account for practical applications of thermoelectric materials.

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Correspondence to H. Iwasaki.

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Iwasaki, H., Yamamoto, T., Kim, H. et al. Development of a Measurement System for the Figure of Merit in the High-Temperature Region. J. Electron. Mater. 42, 1840–1845 (2013). https://doi.org/10.1007/s11664-012-2448-0

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  • DOI: https://doi.org/10.1007/s11664-012-2448-0

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