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Electrical Characteristics of Thin-Film Transistors Fabricated Utilizing a UV/Ozone-Treated TiO2 Channel Layer

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Thin-film transistors (TFTs) utilizing TiO2 channel layers were fabricated by using a solution process. Atomic force microscopy images showed that the surface morphology of the TiO2 films became uniform due to the ultraviolet (UV)/ozone treatment. X-ray photoelectron spectroscopy showed that the UV/ozone treatment reduced the amount of oxygen deficiency in the TiO2 films, resulting in a decrease of the electron concentration on the surface. The performance of the TFT devices was significantly improved due to a decrease of the off-current level resulting from the enhanced uniformity and the decrease of the trap level resulting from the UV/ozone treatment.

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Authors and Affiliations

  1. Department of Electronics and Computer Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 133-791, Korea

    Ho Yong Chong & Tae Whan Kim

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  1. Ho Yong Chong
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  2. Tae Whan Kim
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Correspondence to Tae Whan Kim.

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Chong, H.Y., Kim, T.W. Electrical Characteristics of Thin-Film Transistors Fabricated Utilizing a UV/Ozone-Treated TiO2 Channel Layer. J. Electron. Mater. 42, 398–402 (2013). https://doi.org/10.1007/s11664-012-2348-3

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  • DOI: https://doi.org/10.1007/s11664-012-2348-3

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