Abstract
Several new metastable layered intergrowths based on tin monoselenide and molybdenum diselenide, [(SnSe)1+δ ] m [MoSe2] n , have been prepared by self-assembly from elemental nanolaminate precursors deposited by physical vapor deposition. The thin-film specimens were characterized by laboratory x-ray reflectivity and diffraction, synchrotron x-ray diffraction, electron probe microanalysis, and scanning transmission electron microscopy techniques, all of which indicate the formation of intergrowths with precise layering and well-defined composition. Analysis of in-plane diffraction originating from the individual components yields a structural misfit of δ = 0.06 and suggests turbostratic misorientation of the individual layers. In contrast to most known [(MX)1+δ ] m [TX2] n -type chalcogenide compounds, electrical transport data for the [(SnSe)1+δ ]1[MoSe2]1 composition are consistent with semiconducting behavior.
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C. Heideman, N. Nguyen, J. Hanni, Q. Lin, S. Duncombe, D.C. Johnson, and P. Zschack, J. Solid State Chem. 181, 1701 (2008).
Q. Lin, C.L. Heideman, N. Nguyen, P. Zschack, C. Chiritescu, D.G. Cahill, and D.C. Johnson, Eur. J. Inorg. Chem. 2008, 2382 (2008).
Q. Lin, M. Smeller, C.L. Heideman, P. Zschack, M. Koyano, M.D. Anderson, R. Kykyneshi, D.A. Keszler, I.M. Anderson, and D.C. Johnson, Chem. Mater. 22, 1002 (2010).
M. Noh, C.D. Johnson, M.D. Hornbostel, J. Thiel, and D.C. Johnson, Chem. Mater. 8, 1625 (1996).
G.A. Wiegers, Prog. Solid State Chem. 24, 1 (1996).
P. Zschack, C. Heideman, C. Mortensen, N. Nguyen, M. Smeller, Q. Lin, and D.C. Johnson, J. Electron. Mater. 38, 1402 (2009).
C. Chiritescu, D.G. Cahill, C. Heideman, Q. Lin, C. Mortensen, N.T. Nguyen, D.C. Johnson, R. Rostek, and H. Böttner, J. Appl. Phys. 104, 033533 (2008).
A. Mavrokefalos, Q. Lin, M. Beekman, J.H. Seol, Y.J. Lee, H. Kong, M.T. Pettes, D.C. Johnson, and L. Shi, Appl. Phys. Lett. 96, 181908 (2010).
H. Wiedemeier and H.G. von Schnering, Z. Krist. 148, 295 (1978).
P.B. James and M.T. Lavik, Acta Crystallogr. 16, 1183 (1962).
A.F. Ioffe, The Physics of Semiconductors (New York: Academic, 1960).
Q. Lin, S. Tepfer, C. Heideman, C. Mortensen, N. Nguyen, P. Zschack, M. Beekman, and D.C. Johnson, J. Mater. Res. 26, 1866 (2011).
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Beekman, M., Cogburn, G., Heideman, C. et al. New Layered Intergrowths in the Sn-Mo-Se System. J. Electron. Mater. 41, 1476–1480 (2012). https://doi.org/10.1007/s11664-012-1971-3
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DOI: https://doi.org/10.1007/s11664-012-1971-3