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New Layered Intergrowths in the Sn-Mo-Se System

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Abstract

Several new metastable layered intergrowths based on tin monoselenide and molybdenum diselenide, [(SnSe)1+δ ] m [MoSe2] n , have been prepared by self-assembly from elemental nanolaminate precursors deposited by physical vapor deposition. The thin-film specimens were characterized by laboratory x-ray reflectivity and diffraction, synchrotron x-ray diffraction, electron probe microanalysis, and scanning transmission electron microscopy techniques, all of which indicate the formation of intergrowths with precise layering and well-defined composition. Analysis of in-plane diffraction originating from the individual components yields a structural misfit of δ = 0.06 and suggests turbostratic misorientation of the individual layers. In contrast to most known [(MX)1+δ ] m [TX2] n -type chalcogenide compounds, electrical transport data for the [(SnSe)1+δ ]1[MoSe2]1 composition are consistent with semiconducting behavior.

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Beekman, M., Cogburn, G., Heideman, C. et al. New Layered Intergrowths in the Sn-Mo-Se System. J. Electron. Mater. 41, 1476–1480 (2012). https://doi.org/10.1007/s11664-012-1971-3

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  • DOI: https://doi.org/10.1007/s11664-012-1971-3

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