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Sources of Epitaxial Growth-Induced Stacking Faults in 4H-SiC

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Abstract

Successive reactive-ion etching and microphotoluminescence (PL) intensity mapping have been performed in order to investigate the sources of epitaxial growth-induced stacking faults (SFs) in thick 4H-SiC epilayers. Three kinds of SFs, i.e., 4SSFs, 3SSFs, and 2SSFs, have been identified in the samples. Two of these (3SSFs and 2SSFs) show similar nucleation behaviors, and their formation may be due to stress within the epitaxial layer. In contrast, 4SSFs nucleate at the epilayer–substrate interface and might be related to an unknown dislocation, which shows a rounded-shape etch pit in the substrate.

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Authors and Affiliations

  1. Department of Electronic Science and Engineering, Kyoto University, Kyotodaigaku-katsura, Nishikyo, Kyoto, 615-8510, Japan

    Gan Feng, Jun Suda & Tsunenobu Kimoto

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  1. Gan Feng
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  2. Jun Suda
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  3. Tsunenobu Kimoto
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Correspondence to Gan Feng.

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Feng, G., Suda, J. & Kimoto, T. Sources of Epitaxial Growth-Induced Stacking Faults in 4H-SiC. J. Electron. Mater. 39, 1166–1169 (2010). https://doi.org/10.1007/s11664-010-1192-6

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  • DOI: https://doi.org/10.1007/s11664-010-1192-6

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