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Characterization of Smooth CdTe(111) Films by the Conventional Close-Spaced Sublimation Technique

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Thin epitaxial CdTe films were grown on CdTe(111)B substrates by the close-spaced sublimation (CSS) technique and were characterized over a range of experimental parameters. The source temperature was varied between 480°C and 540°C, maintaining an average constant source–substrate temperature difference ΔT of ∼130°C. Helium was used as a carrier gas at pressures between 2 Torr and 10 Torr. Scanning electron microscopy (SEM) and x-ray diffraction (XRD) were used to analyze the film morphology and structure. Growth rates ranging from 1 μm/h to 4 μm/h were observed, based on profilometer thickness measurements. The addition of a pre-growth heat treatment step and post-growth annealing treatment resulted in smooth CdTe(111) films. An evolution in growth morphology was demonstrated with SEM images and film quality was confirmed with XRD.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, The University of Texas at El Paso, El Paso, TX, 79968, USA

    A. Escobedo, S. Quinones, M. Adame & D. Zubia

  2. Department of Metallurgical and Materials Engineering, The University of Texas at El Paso, El Paso, TX, USA

    J. McClure

  3. U.S. Army Research Laboratory, Adelphi, MD, USA

    G. Brill

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  1. A. Escobedo
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  2. S. Quinones
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  3. M. Adame
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  4. J. McClure
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  5. D. Zubia
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  6. G. Brill
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Correspondence to S. Quinones.

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Escobedo, A., Quinones, S., Adame, M. et al. Characterization of Smooth CdTe(111) Films by the Conventional Close-Spaced Sublimation Technique. J. Electron. Mater. 39, 400–409 (2010). https://doi.org/10.1007/s11664-010-1082-y

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  • DOI: https://doi.org/10.1007/s11664-010-1082-y

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