Abstract
Horizontally aligned single-walled carbon nanotubes (SWNTs) were fabricated on patterned SiO2/Si substrates with groove-and-terrace structures, which were obtained using electron-beam lithography and reactive ion etching. Scanning electron microscopy observation revealed that SWNTs were aligned in the direction parallel to the groove-and-terrace structures and were preferentially grown along the edges of terraces. Using aligned SWNTs as multichannels, carbon nanotube field-effect transistors (CNTFETs) were fabricated on the patterned SiO2/Si substrates. This method will be promising to control the direction of SWNTs on SiO2/Si substrates for fabrication of high-performance CNTFETs with high current outputs.
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Maehashi, K., Iwasaki, S., Ohno, Y. et al. Improvement in Performance of Carbon Nanotube Field-Effect Transistors on Patterned SiO2/Si Substrates. J. Electron. Mater. 39, 376–380 (2010). https://doi.org/10.1007/s11664-009-1002-1
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DOI: https://doi.org/10.1007/s11664-009-1002-1