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GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements

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We obtained the carrier concentration and mobility of silicon-doped gallium nitride nanowires at room temperature with light and dark resistance data. Current–voltage measurements were performed on single-nanowire devices in the dark and under 360 nm illumination. Field-emission scanning electron microscopy was used to measure the device dimensions. The nanowires were modeled with cylindrical geometry, and solutions were computed with a nonlinear fit algorithm. Simulations were also performed to verify the model. The carrier concentration was bounded by 6 × 1017 cm−3 and 1.3 × 1018 cm−3, and the mobility was between 300 cm2 V−1 s−1 and 600 cm2 V−1 s−1.

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Acknowledgements

We thank Ben Klein from Georgia Institute of Technology for simulations showing the shape of the electrical potential for hexagonal nanowires. The studies conducted by the authors from NIST are supported in part by the DARPA Center on Nanoscale Science and Technology for Integrated Micro/Nano-Electromechanical Transducers (iMINT), funded by DARPA N/MEMS S&T Fundamentals Program (HR0011-06-1-0048).

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  1. Optoelectronics Division, National Institute of Standards and Technology, Boulder, CO, USA

    L. M. Mansfield, K. A. Bertness, P. T. Blanchard, T. E. Harvey, A. W. Sanders & N. A. Sanford

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  1. L. M. Mansfield
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Correspondence to L. M. Mansfield.

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Mansfield, L.M., Bertness, K.A., Blanchard, P.T. et al. GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements. J. Electron. Mater. 38, 495–504 (2009). https://doi.org/10.1007/s11664-009-0672-z

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