(CdZn)Te with the composition of 3% Zn and In-doped CdTe single crystals were annealed at various annealing temperatures and under various Cd or Te pressures with the aim of eliminating Te or Cd inclusions. Te inclusions were reduced by Cd-saturated annealing at temperatures above 660°C. Only small (<1 μm) residual dark spots, located at the original position of as-grown inclusions, were observed after annealing. The size of Cd inclusions was reduced by Te-rich annealing at temperatures higher than 700°C. A specific cooling regime was used to eliminate new small Te precipitates (∼1 μm) concurrently formed on dislocations during Te-rich annealing. Poor infrared transmittance of samples with Cd inclusions was detected after Te-rich annealing; therefore, Cd-saturated re-annealing of annealed samples was used for increasing infrared transmittance to a value above 60%. Alternative models explaining the formation of star-shaped corona-surrounding inclusions are discussed.
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Acknowledgements
This work is part of the research plan MSM 0021620834 financed by the Ministry of Education of the Czech Republic and is partly supported by the Grant Agency of Charles University under Contract No. 215/2006 B-FYZ and by the Grant Agency of the Czech Republic under Contract No. 202/06/0258.
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Belas, E., Bugár, M., Grill, R. et al. Reduction of Inclusions in (CdZn)Te and CdTe:In Single Crystals by Post-Growth Annealing. J. Electron. Mater. 37, 1212–1218 (2008). https://doi.org/10.1007/s11664-008-0479-3
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DOI: https://doi.org/10.1007/s11664-008-0479-3