ZnO thin-film transistors (TFTs) were built on glass substrates. The device with a top gate configuration operates in the depletion mode. The ZnO channel was grown by metalorganic chemical vapor deposition (MOCVD) on glass at low temperature. SiO2 was used as the gate dielectric. The TFT has an on/off ratio of ∼4.0 × 104 and a channel field-effect mobility of ∼4.0 cm2/V s. The average transmittance of the ZnO film in the visible wavelength is ∼80%. To compare the characteristics of the TFTs prepared by using a poly-ZnO and epitaxial-ZnO channel, an epi-ZnO TFT with the same configuration and dimensions was made on an r-Al2O3 substrate. The epi-ZnO TFT shows higher field-effect mobility of ∼35 cm2/V s and on/off ratio of ∼108.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
R.L. Hoffman, B.J. Norris, J.F. Wager, Appl. Phys. Lett. 82, 733 (2003) doi:10.1063/1.1542677
R.L. Hoffman, J. Appl. Phys. 95, 5813 (2004). doi:10.1063/1.1712015
S. Masuda, K. Kitamura, Y. Okumura, S. Miyatake, H. Tabata, T. Kawai, J. Appl. Phys. 93, 1624 (2003). doi:10.1063/1.1534627
D. Hong, J.F. Wager, J. Vac. Sci. Technol. B 23, L25 (2005). doi:10.1116/1.2127954
E.M.C. Fortunato, P.M.C. Barquinha, A.C.M.B.G. Pimentel, A.M.F. Gonçalves, A.J.S. Marques, R.F.P. Martins, L.M.N. Pereira, Appl. Phys. Lett. 85, 2541 (2004). doi:10.1063/1.1790587
H.S. Bae, S. Im, Thin Solid Films, 469–470, 75 (2004). doi:10.1016/j.tsf.2004.06.196
I.D. Kim, Y. Choi, H.L. Tuller, Appl. Phys. Lett. 87, 043509 (2005). doi:10.1063/1.1993762
P.F. Carcia, R.S. McLean, M.H. Reilly, Appl. Phys. Lett. 88, 123509 (2006). doi:10.1063/1.2188379
J. Siddiqui, E. Cagin, D. Chen, J.D. Phillips, Appl. Phys. Lett. 88, 212903 (2006). doi:10.1063/1.2204574
H.H. Hsieh, C.C. Wu, Appl. Phys. Lett. 89, 041109 (2006) doi:10.1063/1.2235895
Y.L. Wang, F. Ren, W. Lim, D.P. Norton, S.J. Pearton, I.I. Kravchenko, J.M. Zavada, Appl. Phys. Lett. 90, 232103 (2007). doi:10.1063/1.2746084
M. Yan, H.T. Zhang, E.J. Widjaja, R.P.H. Chang, J. Appl. Phys. 94, 5240 (2003). doi:10.1063/1.1608473
J. Zhu, N.W. Emanetoglu, Y. Chen, Y. Lu, J. Electron. Mater. 33, 556 (2004). doi:10.1007/s11664-004-0046-5
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Zhu, J., Chen, H., Saraf, G. et al. ZnO TFT Devices Built on Glass Substrates. J. Electron. Mater. 37, 1237–1240 (2008). https://doi.org/10.1007/s11664-008-0457-9
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-008-0457-9