Abstract
The polarity control of ZnO films grown on (0001) Al2O3 substrates by plasma-assisted molecular-beam epitaxy (P-MBE) was achieved by using a novel CrN buffer layer. Zn-polar ZnO films were obtained by using a Zn-terminated CrN buffer layer, while O-polar ZnO films were achieved by using a Cr2O3 layer formed by O-plasma exposure of a CrN layer. The mechanism of polarity control was proposed. Optical and structural quality of ZnO films was characterized by high-resolution X-ray diffraction and photoluminescence (PL) spectroscopy. Low-temperature PL spectra of Zn-polar and O-polar samples show dominant bound exciton (I8) and strong free exciton emissions. Finally, one-dimensional periodic structures consisting of Zn-polar and O-polar ZnO films were simultaneously grown on the same substrate. The periodic inversion of polarity was confirmed in terms of growth rate, surface morphology, and piezo response microscopy (PRM) measurement.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
D.M. Bagnall, Y.F. Chen, Z. Zhu, S. Koyama, M.Y. Shen, T. Goto, and T. Yao, Appl. Phys. Lett. 70, 2230 (1997)
S.A. Chevtchenko, J.C. Moore, U. Ozgur, X. Gu, A.A. Baski, H. Morkoc, B. Nemeth, and J.E. Nause, Appl. Phys. Lett. 89, 182111 (2006)
S.K. Hong, T. Hanada, H.J. Ko, Y. Chen, D. Imai, K. Araki, M. Shinohara, K. Saitoh, M. Terauchi, and T. Yao, Phys. Rev. B 65, 115331 (2002)
J. Cai, and F.A. Ponce, J. Appl. Phys. 91, 9856 (2002)
H. Tampo, H. Shibat, K. Matsubara, A. Yamada, P. Fons, S. Niki, M. Yamagata, and H. Kanie, Appl. Phys. Lett. 89, 132113 (2006)
H. Kato, K. Miyamoto, M. Sano, and T. Yao, Appl. Phys. Lett. 84, 4562 (2004)
Y. Wang, X.L. Du, Z.X. Mei, Z.Q. Zeng, M.J. Ying, H.T. Yuan, J.F. Jia, Q.K. Xue, and Z. Zhang, Appl. Phys. Lett. 87, 051901 (2005)
T. Minegishi, J.H. Yoo, H. Suzuki, Z. Vashaei, K. Inaba, K.S. Shim, and T. Yao, J. Vac. Sci. Technol. B 23, 1286 (2005)
S. Zhu, H. Zhu, and N. Ming, Science 279, 843–846 (1997)
A. Bruner, P. Shaier, and D. Eger, Opt. Express 14, 9371 (2006)
J.S. Park, S.K. Hong, T. Minegishi, S.H. Park, I.H. Im, T. Hanada, M.W. Cho, and T. Yao, Appl. Phys. Lett. 90, 201907 (2007)
S.K. Hong, T. Hananda, Y. Chen, H.J. Ko, T. Yao, D. Imai, K. Araki, and M. Shinohara, Appl. Surf. Sci. 190, 491 (2002)
H.J. Ko, T. Yao, Y. Chen, and S.K. Hong, J. Appl. Phys. 92, 4354 (2002)
J. Narayan, and B.C. Larson, J. Appl. Phys. 93, 278 (2003)
A.N. Mariano, and R.E. Hanneman, J. Appl. Phys. 34, 384 (1963)
D. Zhuang, J.H. Edgar, Mater. Sci. Eng. R-Rep. 48, 1 (2005)
A.R. Smith, R.M. Feenstra, D.W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer, and J.E. Northrup, Appl. Phys. Lett. 72, 2114 (1998)
X. Wang, Y. Tomita, O.H. Roh, M. Ohsugi, S.B. Che, T. Ishtani, and A. Yoshikawa, Appl. Phys. Lett. 86, 011921 (2005)
H. Tampo, P. Fons, A. Yamada, K.K. Kim, H. Shibata, K. Matsubara, S. Niki, H. Yoshikawa, and H. Kanie, Appl. Phys. Lett. 87, 141904 (2005)
H. Kato, M. Sano, K. Miyamoto, and T. Yao, J. Cryst. Growth 265, 375 (2004)
X.G. Wang, and J.R. Smith, Phys. Rev. B 68, 201402 (2003)
C. Rehbein, N.M. Harrison, and A. Wander, Phys. Rev. B 54, 14066 (1996)
Z.X. Mei, Y. Wang, X.L. Du, M.J. Ying, Z.Q. Zeng, H. Zheng, J.F. Jia, Q.K. Xue, and Z. Zhang, J. Appl. Phys. 96, 7108 (2004)
G. Bauer, and W. Richer, Optical Characterization of Epitaxial Semiconductor Layers (Springer, Berlin, 1983), Chapter 6
H. Kato, M. Sano, K. Miyamoto, T. Yao, J. Cryst. Growth 275, 2459 (2005)
K. Thonke, Th. Gruber, N. Teofilov, R. Schonfelder, A. Waag, and R. Sauer, Phys. B 308–310, 945 (2001)
P.J. Dean, Phys. Stat. Sol. (a) 81, 625 (1984)
B.K. Meyer, H. Alves, D.M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Straβburg, M. Dworzak, U. Haboeck, and A.V. Rodina, Phys. Stat. Sol. (b) 241, 231 (2004)
A. Teke, U. Ozgur, S. Dogan, X. Gu, H. Morkoc, B. Nemeth, J. Nause, and H.O. Everitt, Phys. Rev. B 70, 195207 (2004)
B.J. Rodriguez, A. Gruverman, A.I. Kingon, and R.J. Nemanich, and O. Ambacher, Appl. Phys. Lett. 80, 4166 (2002)
Acknowledgements
J.S. Park appreciates the financial support for a Research Fellowship and a Grant-in-Aid from the Japan Society for the Promotion of Science (JSPS). S.K. Hong gratefully acknowledges support by a Korea Research Foundation Grant funded by the Korean Government (MOEHRD, Basic Research Promotion Fund) (KRF-2005-205-D00078).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Open Access This is an open access article distributed under the terms of the Creative Commons Attribution Noncommercial License ( https://creativecommons.org/licenses/by-nc/2.0 ), which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
About this article
Cite this article
Park, J., Chang, J., Minegishi, T. et al. Growth of Polarity-Controlled ZnO Films on (0001) Al2O3 . J. Electron. Mater. 37, 736–742 (2008). https://doi.org/10.1007/s11664-007-0350-y
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-007-0350-y