1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70

A common current gain of 70 has been achieved in 4H-SiC bipolar junction transistors (BJTs) at room temperature, which is the highest among those reported. BJTs having an active area of 4 mm × 4 mm exhibit a specific on-resistance of 6.3 mΩ cm² at 25°C, which increases to 17.4 mΩ cm² at 250°C. BV_CEO (the breakdown voltage from collector to emitter with open base) and BV_CBO (the breakdown voltage from collector to base with open emitter) of 1200 V were observed at <5 μA leakage currents at all temperatures up to 250°C. Dynamic characteristics were measured using the IXYS RF/Directed Energy IXDD415 gate driver evaluation board to drive the BJT. A collector current (I _C) rise time at turn-on of 32 ns was measured with a 1.6 A gate current provided to support the collector current of 63 A. An I _C fall time at turn-off of 16 ns was achieved.