Abstract
Brief low-energy helium plasma exposure of mercury cadmium telluride and indium antimonide results in oxide- and elemental-component-free, nearly stoichiometric surfaces. In these initial experiments, the only remaining residue is a topmost trace layer of carbon similar to that present on wet etched and reduced surfaces. The nature of these surfaces was determined by in situ Auger electron spectroscopy, monochromatic X-ray photoelectron, and ion scattering spectroscopy, and compared with established wet chemical and hydrogen argon plasma preparations.
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J.B. Varesi, J.D. Benson, M. Jaime-Vasquez, M. Martinka, A.J. Stoltz, J.H. Dinan, J. Electron. Mater. 35, 1443(2006)
P. Morgen, J.A. Silberman, I. Lindau, W.E. Spicer, J.A. Wilson, J. Vac. Sci. Technol. 21(1), 161(1982)
M. Jaime-Vasquez, M. Martinka, M. Groenert, J.H. Dinan, Appl. Phys. Lett. 88, 031910(2006)
H.H. Anderson and H. L. Bay, Sputtering by Particle Bombardment I, ed. R. Behrisch, Topics in Applied Physics (Berlin: Springer-Verlag, 1981) pp. 195–199
J.B. Malherb, “Sputtering of Compound Semiconductor Surfaces. I Ion-Solid Interactions and Sputter Yields”, Critical Reviews in Solid State and Material Sciences (CRC Press Inc., 19(2), 1994) pp. 69–74, 104–109
A.J. Stoltz, M. Jaime-Vasquez, J.D. Benson, J.B. Varesi, M. Martinka, J. Electron. Mater. 35, 1461(2006)
A.D. Johnson, G.M. Williams, A.J. Pidduck, C.R. Whitehouse, T. Martin, C.T. Elliot and T. Ashley (7th Int. Conf. on Narrow Gap Semicond., Santa Fe, Inst. Phys. Conf. Ser. No. 144: section 4, 204, January 1995)
G.R. Bell, N.S. Kaijaks, R.J. Dixon ,C.F. McConville Surf. Sci. 401(2), 125(1998)
J.D. Benson, J.B. Varesi, A.J. Stoltz, E.P.G. Smith, S.M. Johnson, M. Jaime-Vasquez, J.R. Markunas, L.A. Almeida, J.C. Molstad, J. Electron. Mater. 35, 1434 (2006)
Nina Veisfeld and Joseph D. Geller, J. Vac. Sci. Technol. A6, 2077 (1988)
Wolfgang Eckstein, “DB-Sputtering, Reflection and Range Values”, IPP-Report 9/132 (2002), http://www.dpc.nifs.ac.jp/DB/Eckstein, Data & Planning Center, Nat. Inst. for Fusion Sci., Japan
T.P. Massopust, L.L. Kazmerski, J. Vac. Sci. Technol, A3, 955(1985)
M. Jaime-Vasquez, M. Martinka, R.N. Jacobs, M. Groenert, J. Electron. Mater. 35, 1455 (2006)
W.K. Liu, W.T. Yuen, R.A. Stradling, J. Vac. Sci. Technol. B13, 1539 (1995)
W.K. Liu, B. Santos, J. Vac. Sci. Technol. B14, 647 (1996)
J.F. Klem, J.Y. Tsao, J.L. Reno, A. Datye, S. Chadda, J. Vac. Sci. Technol. A9, 2996(1991)
F.D. Auret, J. Electrochem. Soc. 129, 2752 (1982)
W.F. Micklethwaite, private communication, Firebird Semiconductor, Ltd
T.D. Golding, M. Martinka, J.H. Dinan, J. Appl. 64, 1873(1988)
J. Huerta, M. Lopez, O. Zelaya-Angel, J. Vac. Sci. Technol. B18, 1716(2000)
J. Huerta, M. Lopez, O. Zelaya-Angel, Superficies y Vacio 9, 22–25 (1999)
W.J. Everson, C.K. Ard, J.L. Sepich, B.E. Dean, G.T. Neugebauer, H.F. Shaake, J. Electron. Mater. 24, 505 (1995)
Koichi Sugiyana, J. Crystal Growth 60, 450 (1982)
M. Martinka, L.A. Almeida, J.D. Benson, J.H. Dinan, J. Electron. Mater. 31, 732(2002)
J. H. Dinan, S.B. Qadri, Thin Solid Films 131, 267 (1985)
Acknowledgements
The authors would like to acknowledge Bill Micklethwaite of Firebird Semiconductor, Ltd. for providing a compendium of chemical preparations for InSb and Raytheon Vision Systems for providing the HgCdTe samples through the NVESD/RVS CRDA.
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Martinka, M., Jaime-Vasquez, M., Stoltz, .J. et al. Helium-Plasma-Prepared (111)A HgCdTe and (211)B InSb. J. Electron. Mater. 37, 152–156 (2008). https://doi.org/10.1007/s11664-007-0309-z
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DOI: https://doi.org/10.1007/s11664-007-0309-z