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Molecular beam epitaxy growth of HgCdTe on Ge for third-generation infrared detectors

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Abstract

The Leti-Lir has studied II–VI compounds for infrared (IR) detection for more than 20 years. The need to reduce the production cost of IR focal plane arrays (FPAs) sparked the development of heteroepitaxy on large-area substrates. Germanium has been chosen as the heterosubstrate for the third generation of IR detectors. First, we report on the progress achieved in HgCdTe growth on 3-in. and 4-in. (211)B CdTe/Ge. Then, we discuss the choice of a new machine for larger size and better homogeneity. Finally, we present the latest results on third-generation IR multicolor and megapixel devices. First-time results regarding a middle wavelength infrared (MWIR) dual-band FPA, with a reduced pitch of 25 µm, and a MWIR 1,280×1,024 FPA will be shown. Both detectors are based on molecular beam epitaxy (MBE)-grown HgCdTe on Ge. The results shown validate the choice of Ge as the substrate for third-generation detectors.

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Authors and Affiliations

  1. CEA/LETI-DOPT, 38054, Grenoble, Cedex 9, France

    J. P. Zanatta, G. Badano, P. Ballet, C. Largeron, J. Baylet, O. Gravrand, J. Rothman, P. Castelein, J. P. Chamonal, A. Million & G. Destefanis

  2. SOFRADIR, ZI, BP 21, 38113, Veurey-Voroize, France

    S. Mibord, E. Brochier & P. Costa

Authors
  1. J. P. Zanatta
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  2. G. Badano
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  3. P. Ballet
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  4. C. Largeron
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  5. J. Baylet
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  6. O. Gravrand
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  7. J. Rothman
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  8. P. Castelein
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  9. J. P. Chamonal
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  10. A. Million
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  11. G. Destefanis
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  12. S. Mibord
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  13. E. Brochier
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  14. P. Costa
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Zanatta, J.P., Badano, G., Ballet, P. et al. Molecular beam epitaxy growth of HgCdTe on Ge for third-generation infrared detectors. J. Electron. Mater. 35, 1231–1236 (2006). https://doi.org/10.1007/s11664-006-0246-2

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  • DOI: https://doi.org/10.1007/s11664-006-0246-2

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