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Fabrication of p-Type ZnO Thin Films via DC Reactive Magnetron Sputtering by Using Na as the Dopant Source

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The Na-doped p-type ZnO thin films were prepared by DC reactive magnetron sputtering. Two types of substrates were used for separate testing purposes: silicon wafers for crystallinity measurements and glass slides for electrical and optical transmittance measurements. The lowest room-temperature resistivity under the optimal condition was 59.9 Ω cm, with a Hall mobility of 0.406 cm2 V−1s−1 and a carrier concentration of 2.57 × 1017 cm−3. The Na-doped ZnO thin films possessed a good crystallinity with c-axis orientation and a high transmittance (∼85%) in the visible region. The effects of the substrate temperature on the crystallinity and the electrical properties were discussed.

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Acknowledgement

This work was supported by the National Natural Science Foundation of China under Contract Nos. 50572095 and 50532060.

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Authors and Affiliations

  1. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People’s Republic of China

    L. L. Yang, Z. Z. Ye, L. P. Zhu, Y. J. Zeng, Y. F. Lu & B. H. Zhao

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  1. L. L. Yang
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  2. Z. Z. Ye
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  3. L. P. Zhu
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  4. Y. J. Zeng
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  5. Y. F. Lu
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  6. B. H. Zhao
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Correspondence to Z. Z. Ye.

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Yang, L.L., Ye, Z.Z., Zhu, L.P. et al. Fabrication of p-Type ZnO Thin Films via DC Reactive Magnetron Sputtering by Using Na as the Dopant Source. J. Electron. Mater. 36, 498–501 (2007). https://doi.org/10.1007/s11664-006-0047-7

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  • DOI: https://doi.org/10.1007/s11664-006-0047-7

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