Abstract
Transfer length method (TLM) structures were fabricated to characterize the Ti-HgCdTe contacts. Low-temperature measurement of contact resistance was found to be affected by the background-generated carriers in long wavelength infrared HgCdTe material. Measurements carried out by keeping the TLM structures behind a cold shield showed low contact resistance indicative of the formation of a good “Ohmic” contact. Low specific contact resistance of the order of 10−4 Ω-cm2 makes this contact scheme suitable for the fabrication of photoconductive as well as photovoltaic HgCdTe detectors. Annealing the contacts in air at 60°C for 15 days yielded the specific contact resistance values of the same order of magnitude at room temperature; however, low-temperature measurements show a minor change in the specific contact resistance. The current-voltage measurements show that current transport is dominated by the thermionic field emission mechanism.
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Srivastav, V., Pal, R., Sharma, B.L. et al. Electrical properties of titanium-HgCdTe contacts. J. Electron. Mater. 34, 225–231 (2005). https://doi.org/10.1007/s11664-005-0208-0
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DOI: https://doi.org/10.1007/s11664-005-0208-0