Abstract
In this study, the current density-voltage (J-V) characteristic of Schottky diodes of indium-tin-oxide (ITO) contacts to p-type GaN (p-GaN) has been investigated. The calculated barrier-height value of ITO/p-GaN samples using the thermionic field-emission (TFE) model is 3.2 eV, which implies that the work function of ITO is equal to 4.3 eV. The result is supported by J-V measurements of ITO/n-type GaN Schottky diodes. On the other hand, the barrier height of ITO/p-GaN was also determined from x-ray photoelectron spectroscopy (XPS) data. The analysis of the XPS spectral shifts indicated that this observed barrier-height value of ITO/p-GaN by XPS is in good agreement with the value of 3.2 eV obtained from J-V measurements.
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Lin, YJ., Hsu, CW. Study of schottky barrier heights of indium-tin-oxide on p-GaN using x-ray photoelectron spectroscopy and current-voltage measurements. J. Electron. Mater. 33, 1036–1040 (2004). https://doi.org/10.1007/s11664-004-0032-y
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DOI: https://doi.org/10.1007/s11664-004-0032-y