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Efficiency enhancement of InGaN/GaN light-emitting diodes with a back-surface distributed bragg reflector

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Abstract

The design, fabrication, and performance characteristics of a back-surface distributed Bragg reflector (DBR) enhanced InGaN/GaN light-emitting diode (LED) are described. A wide reflectance bandwidth in the blue and green wavelength regions is obtained using a double quarter-wave stack design composed of TiO2 and SiO2 layers. More than 65% enhancement in extracted light intensity is demonstrated for a blue LED measured at the chip level. Similar improvement in green LED performance is discussed and achieved through simulation. Possible applications of back-surface DBR-enhanced LEDs include surface-mount packages with significantly reduced vertical profiles, resonant cavity LEDs, and superluminescent diodes.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of California, 92697, Irvine, CA

    Y. S. Zhao, D. L. Hibbard & H. P. Lee

  2. AXT Optoelectronics, 91754, Monterey Park, CA

    Y. S. Zhao, K. Ma, W. So & H. Liu

Authors
  1. Y. S. Zhao
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  2. D. L. Hibbard
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  3. H. P. Lee
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  4. K. Ma
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  5. W. So
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  6. H. Liu
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Zhao, Y.S., Hibbard, D.L., Lee, H.P. et al. Efficiency enhancement of InGaN/GaN light-emitting diodes with a back-surface distributed bragg reflector. J. Electron. Mater. 32, 1523–1526 (2003). https://doi.org/10.1007/s11664-003-0124-0

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  • DOI: https://doi.org/10.1007/s11664-003-0124-0

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