Abstract
High-quality CdTe crystals with resistivities higher than 108 Ω cm were grown by the physical-vapor transport (PVT) technique. Indium, aluminum, and the transition-metal scandium were introduced at the nominal level of about 6 ppm to the source material. Low-temperature photoluminescence (PL) has been employed to identify the origins of PL emissions of the crystals. The emission peaks at 1.584 eV and 1.581 eV were found only in the In-doped crystal. The result suggests that the luminescence line at 1.584 eV is associated with Cd-vacancy/In complex. The intensity of the broadband centered at 1.43 eV decreases strongly with introduction of Sc.
Similar content being viewed by others
References
S.M. Hage-Ali and P. Siffert, Semiconductors and Semimetals, vol. 43, ed. T.E. Schlesinger and R.B. James (New York: Academic Press, 1995).
C.E. Barnes and K. Zanio, J. Appl. Phys. 46, 3959 (1975).
S. Seto, K. Suzuki, V.N. Abastillas, and K. Inabe, J. Cryst. Growth 214–215, 974 (2000).
H. Shin and C. Sun, J. Cryst. Growth 186, 354 (1998).
B. Yang, Y. Ishikawa, Y. Doumae, T. Miki, T. Ohyama, and M. Isshiki, J. Cryst. Growth 172, 370 (1997).
K. Grasza, U. Zuzga-Grasza, A. Jedrzejczak, R.R. Galazka, J. Majewski, A. Szadkowski, and E. Grodzicka, J. Cryst. Growth 123, 519 (1992).
K. Grasza, W. Palosz, and S.B. Trivedi, J. Cryst. Growth 207, 179 (1999).
K. Grasza and W. Palosz, Cryst. Res. Technol. 34, 565 (1999).
J. Garcia-Garcia, J. Gonzalez-Hernandez, J.G. Mendoza-Alvarez, E. Cruz, and G. Contreras-Puente, J. Appl. Phys. 67, 3810 (1990).
M.D. Kim, T.W. Kang, G.H. Kim, M.S. Han, H.D. Cho, J.M. Kim, Y.T. Jeoung, and T.W. Kim, J. Appl. Phys. 73, 4074 (1993).
H. Chen et al., J. Appl. Phys. 80, 3509 (1996).
J.M. Francou, K. Saminadayar, and J.L. Pautrat, Phys. Rev. B 41, 12035 (1990).
E. Molva and L.S. Dang, Phys. Rev. B 27, 6222 (1983).
J. Hamann, A. Burchard, M. Deicher, T. Filz, S. Lany, V. Ostheimer, F. Strasser, and H. Wolf, J. Cryst. Growth 214–215, 207 (2000).
M. Soltani, M. Certier, R. Evrard, and E. Kartheuser, J. Appl. Phys. 78, 5626 (1995).
D.P. Halliday, M.D.G. Potter, J.T. Mullins, and A.W. Brinkman, J. Cryst. Growth 220, 30 (2000).
S.H. Song, J. Wang, Y. Ishikawa, S. Seto, and M. Isshiki, J. Cryst. Growth 237–239, 1726 (2002).
L. Worschech, W. Ossau, and G. Landwehr, Phys. Rev. B 52, 13965 (1995).
V. Ostheimer, T. Filz, J. Hamann, S. Lauer, C. Schmitz, D. Weber, H. Wolf, and T. Wichert, J. Cryst. Growth 198–199, 1184 (1999).
N.C. Giles, S. Hwang, J.F. Schetzina, S. McDevitt, and C.J. Johnson, J. Appl. Phys. 64, 2656 (1988).
S. Seto, A. Tanaka, K. Suzuki, and M. Kawashima, J. Cryst. Growth 101, 430 (1990).
J. Lee, N.C. Giles, D. Rajavel, and C.J. Summers, J. Appl. Phys. 78, 5669 (1995).
J. Krustok, J. Madasson, K. Hjelt, and H. Collan, J. Mater. Sci. 32, 1545 (1997).
J.M. Figueroa, F. Sanchez-Sinencio, J.G. Mendoza-Alvarez, O. Zelaya, C. Vazquez-Lopez, and J.S. Helman, J. Appl. Phys. 60, 452 (1986).
M. Fiederle, C. Eiche, M. Salk, R. Schwarz, K.W. Benz, W. Stadler, D.M. Hofmann, and B.K. Meyer, J. Appl. Phys. 84, 6689 (1998).
D.J. Reese, C. Szeles, and K.A. Harris, J. Electron. Mater. 29, 777 (2000).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Palosz, W., Grasza, K., Boyd, P.R. et al. Photoluminescence of CdTe crystals grown by physical-vapor transport. J. Electron. Mater. 32, 747–751 (2003). https://doi.org/10.1007/s11664-003-0064-8
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-003-0064-8