Abstract
Factors that affect width and aspect ratio in electron cyclotron resonance (ECR) etched HgCdTe trenches are investigated. The ECR etch bias and anisotropy are determined by photoresist feature erosion rate. The physical characteristics of the trenches are attributed to a combination of photoresist feature geometry and ECR plasma etch chemistry. This knowledge has led to production of trenches suitable for two-color, 20 µm pitch detectors.
Similar content being viewed by others
References
W.E. Tennant et al., J. Electron. Mater. 30, 590 (2001).
R.D. Rajavel et al., J. Electron. Mater. 27, 747 (1998).
T.J. de Lyon et al., J. Cryst. Growth 201, 980 (1999).
A.J. Stoltz, M.R. Banish, J.H. Dinan, J.D. Benson, D.R. Brown, D.B. Chenault, and P.R. Boyd, J. Electron. Mater. 30, 733 (2001).
A.J. Stoltz, J.D. Benson, M. Thomas, P.R. Boyd, M. Martinka, and J.H. Dinan, J. Electron. Mater. 31, 749 (2002).
R. Dammel, in SPIE Tutorial Texts, TT 11, ed. D.C. O’Shea (Bellingham, WA: SPIE, 1993).
J.D. Benson, A.J. Stoltz, A.W. Kaleczyc, M. Martinka, L.A. Almeida, P.R. Boyd, and J.H. Dinan, J. Electron. Mater. 31, 822 (2002).
J.D. Benson, A.J. Stoltz, A.W. Kaleczyc, M. Martinka, L.A. Almeida, P.R. Boyd, and J.H. Dinan, Proc. of SPIE, vol. 4795 (Bellingham, WA: SPIE, 2002), pp. 129–135.
H. Jansen, M. de Boer, R. Wiegerink, N. Tas, E. Smulders, C. Neagu, M. Elwenspoek, Microelectron. Eng. 35, 45 (1997).
M. Elwenspoek and H.V. Jansen, Silicon Micromachining (Cambridge, UK: Cambridge University Press, 1998), pp. 331–381.
A.J. Stoltz, J.D. Benson, P.R. Boyd, J.B. Varesi, M. Martinka, A.W. Kaleczyc, E.P. Smith, S.M. Johnson, W.A. Radford, and J.H. Dinan, in this issue.
W.A. Moreau, Semiconductor Lithography—Principles, Practices, and Materials (New York: Plenum Press, 1988).
Resists were from the Clariant Corporation, Somerville, NJ.
A.C. Adams and C.D. Capio, J. Electrochem. Soc. 128, 366 (1981).
S. Ohki, M. Oda, and T. Shibata, Proc. of 7th Symp. on Dry Processes (Tokyo: 1985), pp. 108–113.
J.P. Biersack and L.G. Haggmark, Nucl. Instrum. Methods 174, 257 (1980).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Benson, J.D., Stoltz, A.J., Boyd, P.R. et al. Lithography factors that determine the aspect ratio of electron cyclotron resonance plasma etched HgCdTe trenches. J. Electron. Mater. 32, 686–691 (2003). https://doi.org/10.1007/s11664-003-0053-y
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-003-0053-y