Abstract
The Schottky barrier height (SBH) of Au on 4H-SiC(0001) has been studied using photoemission and synchrotron radiation. The Au was deposited in-situ on clean and well-ordered √3×√3 R30° reconstructed SiC surfaces prepared by in situ heating at ∼950°C. The SBH was determined from the shift observed in the Si 2p core level, in addition to the initial band bending determined for the clean surface. The results were compared with values obtained by electrical, capacitance-voltage (C-V), and current-voltage (I-V) characterization methods. A favorable comparison between the three independent, SBH determination methods was found.
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Virojanadara, C., Glans, P.A., Balasubramanian, T. et al. Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation. J. Electron. Mater. 31, 1353–1356 (2002). https://doi.org/10.1007/s11664-002-0121-8
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DOI: https://doi.org/10.1007/s11664-002-0121-8