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Development of Al-free ohmic contact to n-GaN

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Abstract

We have investigated the electrical properties and interfacial reactions of the Si/Ti-based ohmic contacts to Si-doped n-GaN grown by metal organic chemical vapor deposition and the electrical properties were related to the material reactions. Si/Ti contact system was selected because Ti silicides have a low work function comparable to Al and also Si was used widely as an n-type dopant. As the annealing temperature increased, the specific contact resistance of Si/Ti-based ohmic contacts decreased and showed minimum contact decreased and showed minimum contact resistance as low as 3.86 10−6 cm2 after annealing at 900°C for 3 min under N2 ambient. Our experimental results show that the ohmic behavior of Si/Ti-based contact, were attributed to the low barrier height of Ti-silicide/GaN interface, which was formed through the interfacial reaction between Si and Ti layers. In order to clarify the current conduction mechanism of Si/Ti-based contact, temperature dependent contact resistance measurement was carried out for Au(1000 Å)/Ti(400 Å)/Si(1500 Å)/Ti(150 Å) contact system after annealing at 700°C for 3 min. The contact resistance of Si/Ti-based ohmic contact decreased exponentially with the measuring temperature and so it can be concluded that current flows over the low barrier height by thermionic emission.

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Authors and Affiliations

  1. Thin Film Materials Laboratory, School of Materials Science & Engineering, Yonsei University, 134 Shinchon-Dong, Seodaemun-Gu, 120-749, Seoul, Korea

    Dae-Woo Kim, Jun Cheol Bae, Woo Jin Kim & Hong Koo Baik

  2. LG Corporate Institute of Technology, 16 Woomyeon-Dong, Secho-Gu, 137-140, Seoul, Korea

    Cha Yeon Kim, Wook Kim, Yoon Ho Choi, Chin-Kyo Kim & Tae-Kyung Yoo

  3. Department of Semiconductor Science and Technology, Semiconductor Physics Center, Chombuk National University, 561-756, Chonju, Korea

    Chang Hee Hong

  4. Department of Materials Engineering, Kangwon National University, Chunchon, 200-092, kangwon-Do, Korea

    Sung-Man Lee

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  1. Dae-Woo Kim
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  2. Jun Cheol Bae
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Kim, DW., Bae, J.C., Kim, W.J. et al. Development of Al-free ohmic contact to n-GaN. J. Electron. Mater. 30, 855–860 (2001). https://doi.org/10.1007/s11664-001-0071-6

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  • DOI: https://doi.org/10.1007/s11664-001-0071-6

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