Abstract
Ion milling has been used to type convert molecular beam epitaxy vacancy-doped CdxHg1−xTe, and electron beam induced current measurements have been performed to study the pn-junction depth dependence on milling time, milling current and vacancy concentration. The junction depth seems to initially increase linearly with time for depths up to ∼ 4 µm, then possibly as the square root of time at larger depth. For given x, the depth increases with decreasing vacancy concentration. For the same annealing temperature, high x samples have lower carrier concentration and greater junction depth than low x samples. Up to 4 µm, junction depth is proportional to milling current density as well as milling time.
Similar content being viewed by others
References
J.T.M. Wotherspoon, U.K. patent GB2,095,898 (1981).
M.V. Blackman, D.E. Charlton, M.D. Jenner, D.R. Purdy, and J.T.M. Wotherspoon, Electron. Lett. 23, 978 (1987).
G. Bahir and E. Finkman, J. Vac. Sci. Technol. A7, 348 (1989).
J.L. Elkind, J. Vac. Sci. Technol. B10, 1460 (1992).
V.I. Ivanov-Omskii, K.E. Mironov, and K.D. Mynbaev, Semicond. Sci. Technol. 8, 634 (1993).
E. Belas, P. Höschl, R. Grill, J. Franc, P. Moravec, K. Lischka, H. Sitter, and A. Toth, Semicond. Sci. Technol. 8, 1695 (1993).
M.P. Hastings, C.D. Maxey, B.E. Matthews, N.E. Metcalfe, P. Capper, C.L. Jones, and I.G. Gale, J. Cryst. Growth 138, 917 (1994).
S. Holander-Gleixner, H.G. Robinson, and C.R. Helms, J. Appl. Phys. 83, 1299 (1998).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Haakenaasen, R., Colin, T., Steen, H. et al. Electron beam induced current study of ion beam milling type conversion in molecular beam epitaxy vacancy-doped CdxHg1−xTe. J. Electron. Mater. 29, 849–852 (2000). https://doi.org/10.1007/s11664-000-0236-8
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-000-0236-8